Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
700 400 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
800 |
A |
|
PD |
Maximum Power Dissipation @ T =175oC |
2542 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
400 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
800 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=400A,VGE=15V, Tj=125oC |
|
2.00 |
|
|||
|
IC=400A,VGE=15V, Tj=150oC |
|
2.10 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16.0mA,VCE=VGE, Tj=25oC |
5.0 |
5.8 |
6.5 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.9 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
28.8 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.31 |
|
nF |
|
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
1.20 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj=25oC |
|
250 |
|
ns |
|
tr |
Rise Time |
|
39 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
500 |
|
ns |
|
|
tf |
Fall Time |
|
100 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
17.0 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
42.0 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj= 125oC |
|
299 |
|
ns |
|
tr |
Rise Time |
|
46 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
605 |
|
ns |
|
|
tf |
Fall Time |
|
155 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
25.1 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
61.9 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG= 1.8Ω, VGE=±15V, Tj= 150oC |
|
320 |
|
ns |
|
tr |
Rise Time |
|
52 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
625 |
|
ns |
|
|
tf |
Fall Time |
|
180 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
30.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
66.8 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=600V, VCEM≤1200V |
|
1600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=400A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V |
|
IF=400A,VGE=0V,Tj= 125oC |
|
1.65 |
|
|||
|
IF=400A,VGE=0V,Tj= 150oC |
|
1.65 |
|
|||
|
Qr |
Recovered Charge |
VCC=600V,IF=400A, -di/dt=6000A/μs, VGE=- 15V, Tj=25oC |
|
44 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
490 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
19.0 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=400A, -di/dt=6000A/μs, VGE=- 15V, Tj= 125oC |
|
78 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
555 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
35.1 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=400A, -di/dt=6000A/μs, VGE=- 15V, Tj= 150oC |
|
90 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
565 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
38.8 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
|
∆R/R |
Deviation of R100 |
TC= 100oC,R100=493.3Ω |
-5 |
|
5 |
% |
|
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
|
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.059 0.106 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.109 0.196 0.035 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
|
G |
Weight of Module |
|
300 |
|
g |
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