GD400HFQ120C2SD

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC=100oC

769

400

A

ICM

Pulsed Collector Current  tp=1ms

800

A

PD

Maximum Power Dissipation  @ Tvj  =175oC

2272

W

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tvj=25oC

1.85

2.30

V

IC=400A,VGE=15V, Tvj=125oC

2.25

IC=400A,VGE=15V, Tvj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC=16.00mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=100KHz, VGE=0V

43.2

nF

Cres

Reverse Transfer

Capacitance

1.18

nF

QG

Gate Charge

VGE=- 15…+15V

3.36

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2Ω, LS=45nH,

VGE=±15V,Tvj=25oC

288

ns

tr

Rise Time

72

ns

td(off)

Turn-Off Delay Time

314

ns

tf

Fall Time

55

ns

Eon

Turn-On Switching

Loss

43.6

mJ

Eoff

Turn-Off Switching

Loss

12.4

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2Ω, LS=45nH,

VGE=±15V,Tvj=125oC

291

ns

tr

Rise Time

76

ns

td(off)

Turn-Off Delay Time

351

ns

tf

Fall Time

88

ns

Eon

Turn-On Switching

Loss

57.6

mJ

Eoff

Turn-Off Switching

Loss

17.1

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2Ω, LS=45nH,

VGE=±15V,Tvj=150oC

293

ns

tr

Rise Time

78

ns

td(off)

Turn-Off Delay Time

365

ns

tf

Fall Time

92

ns

Eon

Turn-On Switching

Loss

62.8

mJ

Eoff

Turn-Off Switching

Loss

18.6

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=800V, VCEM≤1200V

1500

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tvj=25oC

1.85

2.30

V

IF=400A,VGE=0V,Tvj=125oC

1.90

IF=400A,VGE=0V,Tvj=150oC

1.95

Qr

Recovered

Charge

VR=600V,IF=400A,

-di/dt=4130A/μs,VGE=- 15V, LS=45nH,Tvj=25oC

38.8

μC

IRM

Peak Reverse

Recovery Current

252

A

Erec

Reverse Recovery Energy

11.2

mJ

Qr

Recovered

Charge

VR=600V,IF=400A,

-di/dt=3860A/μs,VGE=- 15V, LS=45nH,Tvj=125oC

61.9

μC

IRM

Peak Reverse

Recovery Current

255

A

Erec

Reverse Recovery Energy

18.7

mJ

Qr

Recovered

Charge

VR=600V,IF=400A,

-di/dt=3720A/μs,VGE=- 15V, LS=45nH,Tvj=150oC

75.9

μC

IRM

Peak Reverse

Recovery Current

257

A

Erec

Reverse Recovery Energy

20.5

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.066

0.115

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.031

0.055

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g