All Categories

1700V

1700V

Home /  Products /  IGBT module /  1700V

GD400HFL170C2S

IGBT Module,1700V 400A

Brand:
STARPOWER
Spu:
GD400HFL170C2S
  • Introduction
Introduction

Features

  • Low VCE(sat)  SPT+ IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

 

IGBT

 

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

659

400

A

ICM

Pulsed Collector Current  tp=1ms

800

A

PD

Maximum Power Dissipation  @ Tj=175oC

2727

W

Diode

 

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current  tp=1ms

800

A

Module

 

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

 

VCE(sat)

 

 

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

 

2.00

2.45

 

 

V

IC=400A,VGE=15V, Tj=125oC

 

2.40

 

IC=400A,VGE=15V, Tj=150oC

 

2.50

 

VGE(th)

Gate-Emitter Threshold Voltage

IC= 16.0mA,VCE=VGE, Tj=25oC

5.4

6.2

7.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

 

 

400

nA

RGint

Internal Gate Resistance

 

 

0.5

 

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

 

27.0

 

nF

Cres

Reverse Transfer

Capacitance

 

0.92

 

nF

QG

Gate Charge

VGE=- 15…+15V

 

3.08

 

μC

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,  RG=2.2Ω,VGE=±15V, Tj=25oC

 

367

 

ns

tr

Rise Time

 

112

 

ns

td(off)

Turn-Off Delay Time

 

523

 

ns

tf

Fall Time

 

236

 

ns

Eon

Turn-On Switching

Loss

 

42.5

 

mJ

Eoff

Turn-Off Switching

Loss

 

76.7

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,  RG=2.2Ω,VGE=±15V, Tj= 125oC

 

375

 

ns

tr

Rise Time

 

116

 

ns

td(off)

Turn-Off Delay Time

 

599

 

ns

tf

Fall Time

 

458

 

ns

Eon

Turn-On Switching

Loss

 

58.7

 

mJ

Eoff

Turn-Off Switching

Loss

 

109

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=900V,IC=400A,  RG=2.2Ω,VGE=±15V, Tj= 150oC

 

377

 

ns

tr

Rise Time

 

120

 

ns

td(off)

Turn-Off Delay Time

 

611

 

ns

tf

Fall Time

 

560

 

ns

Eon

Turn-On Switching

Loss

 

73.0

 

mJ

Eoff

Turn-Off Switching

Loss

 

118

 

mJ

 

ISC

 

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 1000V, VCEM≤1700V

 

 

1200

 

 

A

Diode Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

 

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

 

1.80

2.25

 

V

IF=400A,VGE=0V,Tj= 125oC

 

1.90

 

IF=400A,VGE=0V,Tj= 150oC

 

1.95

 

Qr

Recovered Charge

VCC=900V,IF=400A,

-di/dt=2900A/μs,VGE=- 15V, Tj=25oC

 

101

 

μC

IRM

Peak Reverse

Recovery Current

 

488

 

A

Erec

Reverse Recovery Energy

 

71.1

 

mJ

Qr

Recovered Charge

VCC=900V,IF=400A,

-di/dt=2900A/μs,VGE=- 15V, Tj= 125oC

 

150

 

μC

IRM

Peak Reverse

Recovery Current

 

562

 

A

Erec

Reverse Recovery Energy

 

106

 

mJ

Qr

Recovered Charge

VCC=900V,IF=400A,

-di/dt=2900A/μs,VGE=- 15V, Tj= 150oC

 

160

 

μC

IRM

Peak Reverse

Recovery Current

 

575

 

A

Erec

Reverse Recovery Energy

 

112

 

mJ

 

 

 

Module Characteristics TC=25oC unless otherwise noted

 

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

 

 

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

 

0.35

 

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

 

 

0.055

0.105

K/W

 

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

 

0.107

0.204

0.035

 

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

 

5.0

5.0

N.m

G

Weight of Module

 

300

 

g

 

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000

RELATED PRODUCT

Have questions about any products?

Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.

Get a Quote

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000