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GD400CUT170C2S

IGBT Module,1700 400A

Brand:
STARPOWER
Spu:
GD400CUT170C2S
  • Introduction
Introduction

Features

  • Low VCE(sat) trench IGBT technology
  • Low switching losses
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • AC inverter drives
  • Switching mode power supplies

 

IGBT TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD400CUT170C2S

Units

VCES

Collector-Emitter Voltage    @ Tj=25

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current    @ TC=25

@ TC=80

650

400

A

ICM

Pulsed Collector Current    tp=1ms

800

A

Ptot

Total Power Dissipation    @ Tj= 150

2403

W

TSC

Short Circuit Withstand Time    @ Tj=150

10

μs

Off Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25

1700

 

 

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25

 

 

3.0

mA

IGES

Gate-Emitter Leakage

Current

VGE=VGES,VCE=0V, Tj=25

 

 

400

nA

On Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold

Voltage

IC= 16mA,VCE=VGE, Tj=25

5.2

5.8

6.4

V

 

 

VCE(sat)

 

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25

 

2.00

2.45

 

 

V

IC=400A,VGE=15V, Tj= 125

 

2.40

 

Switching Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

td(on)

Turn-On Delay Time

 

VCC=900V,IC=400A,   RG=3.6Ω,VGE= ±15V, Tj=25

 

278

 

ns

tr

Rise Time

 

81

 

ns

td(off)

Turn-Off Delay Time

 

802

 

ns

tf

Fall Time

 

119

 

ns

Eon

Turn-On Switching Loss

 

104

 

mJ

Eoff

Turn-Off Switching Loss

 

86

 

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=400A,   RG=3.6Ω,VGE= ±15V, Tj= 125

 

302

 

ns

tr

Rise Time

 

99

 

ns

td(off)

Turn-Off Delay Time

 

1002

 

ns

tf

Fall Time

 

198

 

ns

Eon

Turn-On Switching

Loss

VCC=900V,IC=400A,   RG=3.6Ω,VGE= ±15V, Tj= 125

 

136

 

mJ

Eoff

Turn-Off Switching

Loss

 

124

 

mJ

Cies

Input Capacitance

 

VCE=25V,f=1Mhz,

VGE=0V

 

36

 

pF

Coes

Output Capacitance

 

1.5

 

pF

Cres

Reverse Transfer

Capacitance

 

1.2

 

pF

RGint

Internal Gate Resistance

 

 

1.9

 

Ω

 

ISC

 

SC Data

TP 10μs,VGE=15V,     Tj=125,VCC= 1000V, VCEM1700V

 

 

1600

 

 

A

 

 

DIODE TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD400CUT170C2S

Units

VRRM

Repetitive Peak Reverse Voltage    @ Tj=25

1700

V

IF

DC Forward Current    @ TC=80

100

A

IFRM

Repetitive Peak Forward Current    tp=1ms

200

A

I2t

I2t-value,VR=0V,tp=10ms,Tj=125

1800

A2s

Characteristics Values

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF= 100A,VGE=0V

Tj=25

 

1.80

2.20

V

Tj= 125

 

1.90

 

Qr

Diode Reverse

Recovery Charge

 

IF= 100A,

VR=900V,

di/dt=-2450A/μs, VGE=- 15V

Tj=25

 

29.0

 

μC

Tj= 125

 

48.5

 

 

IRM

Diode Peak

Reverse Recovery Current

Tj=25

 

155

 

 

A

Tj= 125

 

165

 

Erec

Reverse Recovery Energy

Tj=25

 

15.5

 

mJ

Tj= 125

 

27.5

 

IGBT Module

 

Symbol

Parameter

Min.

Typ.

Max.

Units

VISO

Isolation Voltage RMS,f=50Hz,t=1min

 

2500

 

V

LCE

Stray Inductance

 

 

20

nH

RCC’+EE 

Module Lead Resistance,Terminal to Chip @ TC=25

 

0.35

 

mΩ

 

 

RθJC

Junction-to-Case

(IGBT-inverter,per 1/2 Module)

 

 

0.052

 

 

K/W

Junction-to-Case

(DIODE-brake-chopper per 1/2 Module)

 

 

0.280

RθCS

Case-to-Sink (Conductive grease applied)

 

0.035

 

K/W

Tj

Maximum Junction Temperature

 

150

 

TSTG

Storage Temperature Range

-40

 

125

Mounting

Torque

Power Terminal Screw:M6

2.5

 

5.0

N.m

Mounting Screw:M6

3.0

 

5.0

G

Weight of Module

 

300

 

g

 

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