Home / Products / IGBT module / 1700V
Features
Typical Applications
IGBT TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD400CUT170C2S |
Units |
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
650 400 |
A |
ICM |
Pulsed Collector Current tp=1ms |
800 |
A |
Ptot |
Total Power Dissipation @ Tj= 150℃ |
2403 |
W |
TSC |
Short Circuit Withstand Time @ Tj=150℃ |
10 |
μs |
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1700 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
3.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 16mA,VCE=VGE, Tj=25℃ |
5.2 |
5.8 |
6.4 |
V |
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25℃ |
|
2.00 |
2.45 |
V |
IC=400A,VGE=15V, Tj= 125℃ |
|
2.40 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
||
td(on) |
Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj=25℃ |
|
278 |
|
ns |
||
tr |
Rise Time |
|
81 |
|
ns |
|||
td(off) |
Turn-Off Delay Time |
|
802 |
|
ns |
|||
tf |
Fall Time |
|
119 |
|
ns |
|||
Eon |
Turn-On Switching Loss |
|
104 |
|
mJ |
|||
Eoff |
Turn-Off Switching Loss |
|
86 |
|
mJ |
|||
td(on) |
Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj= 125℃ |
|
302 |
|
ns |
||
tr |
Rise Time |
|
99 |
|
ns |
|||
td(off) |
Turn-Off Delay Time |
|
1002 |
|
ns |
|||
tf |
Fall Time |
|
198 |
|
ns |
|||
Eon |
Turn-On Switching Loss |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj= 125℃ |
|
136 |
|
mJ |
||
Eoff |
Turn-Off Switching Loss |
|
124 |
|
mJ |
|||
Cies |
Input Capacitance |
VCE=25V,f=1Mhz, VGE=0V |
|
36 |
|
pF |
||
Coes |
Output Capacitance |
|
1.5 |
|
pF |
|||
Cres |
Reverse Transfer Capacitance |
|
1.2 |
|
pF |
|||
RGint |
Internal Gate Resistance |
|
|
1.9 |
|
Ω |
||
ISC |
SC Data |
TP ≤10μs,VGE=15V, Tj=125℃,VCC= 1000V, VCEM≤1700V |
|
1600 |
|
A |
DIODE TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD400CUT170C2S |
Units |
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
1700 |
V |
IF |
DC Forward Current @ TC=80℃ |
100 |
A |
IFRM |
Repetitive Peak Forward Current tp=1ms |
200 |
A |
I2t |
I2t-value,VR=0V,tp=10ms,Tj=125℃ |
1800 |
A2s |
Characteristics Values
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF= 100A,VGE=0V |
Tj=25℃ |
|
1.80 |
2.20 |
V |
Tj= 125℃ |
|
1.90 |
|
||||
Qr |
Diode Reverse Recovery Charge |
IF= 100A, VR=900V, di/dt=-2450A/μs, VGE=- 15V |
Tj=25℃ |
|
29.0 |
|
μC |
Tj= 125℃ |
|
48.5 |
|
||||
IRM |
Diode Peak Reverse Recovery Current |
Tj=25℃ |
|
155 |
|
A |
|
Tj= 125℃ |
|
165 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
15.5 |
|
mJ |
|
Tj= 125℃ |
|
27.5 |
|
IGBT Module
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
|
2500 |
|
V |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE ’ |
Module Lead Resistance,Terminal to Chip @ TC=25℃ |
|
0.35 |
|
mΩ |
RθJC |
Junction-to-Case (IGBT-inverter,per 1/2 Module) |
|
|
0.052 |
K/W |
Junction-to-Case (DIODE-brake-chopper per 1/2 Module) |
|
|
0.280 |
||
RθCS |
Case-to-Sink (Conductive grease applied) |
|
0.035 |
|
K/W |
Tj |
Maximum Junction Temperature |
|
150 |
|
℃ |
TSTG |
Storage Temperature Range |
-40 |
|
125 |
℃ |
Mounting Torque |
Power Terminal Screw:M6 |
2.5 |
|
5.0 |
N.m |
Mounting Screw:M6 |
3.0 |
|
5.0 |
||
G |
Weight of Module |
|
300 |
|
g |
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