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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
630 400 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
800 |
A |
|
PD |
Maximum Power Dissipation @ T =175oC |
2083 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
400 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
800 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=400A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=400A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
|
IC=400A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 10.0mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.9 |
|
Ω |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj=25oC |
|
257 |
|
ns |
|
tr |
Rise Time |
|
96 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
628 |
|
ns |
|
|
tf |
Fall Time |
|
103 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
23.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
34.0 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj= 125oC |
|
268 |
|
ns |
|
tr |
Rise Time |
|
107 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
659 |
|
ns |
|
|
tf |
Fall Time |
|
144 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
35.3 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
51.5 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, VGE=±15V, Tj= 150oC |
|
278 |
|
ns |
|
tr |
Rise Time |
|
118 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
680 |
|
ns |
|
|
tf |
Fall Time |
|
155 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
38.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
56.7 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
1600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=400A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V |
|
IF=400A,VGE=0V,Tj= 125oC |
|
1.65 |
|
|||
|
IF=400A,VGE=0V,Tj= 150oC |
|
1.65 |
|
|||
|
Qr |
Recovered Charge |
VR=600V,IF=400A, -di/dt=5000A/μs,VGE=- 15V Tj=25oC |
|
38.0 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
285 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
19 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=400A, -di/dt=5000A/μs,VGE=- 15V Tj= 125oC |
|
66.5 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
380 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
36.6 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=400A, -di/dt=5000A/μs,VGE=- 15V Tj= 150oC |
|
76.0 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
399 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
41.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
LCE |
Stray Inductance |
|
|
20 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.072 0.095 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.035 0.046 0.010 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
|
G |
Weight of Module |
|
300 |
|
g |
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