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IGBT Module，1200V 300A；3-level in one-package
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
T1,T2 IGBT
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
483 300 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
600 |
A |
|
PD |
Maximum Power Dissipation @ T =175oC |
1612 |
W |
D1,D2 Diode
|
Symbol |
Description |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
300 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
T3,T4 IGBT
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
650 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=60oC |
372 300 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
600 |
A |
|
PD |
Maximum Power Dissipation @ T =175oC |
920 |
W |
D3,D4 Diode
|
Symbol |
Description |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
650 |
V |
|
IF |
Diode Continuous Forward Current |
300 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
Module
|
Symbol |
Description |
Values |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
T1,T2 IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=300A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=300A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
|
IC=300A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=7.50mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
2.5 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
21.0 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.20 |
|
nF |
|
|
QG |
Gate Charge |
VGE=-15…+15V |
|
2.60 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=300A, RG= 1.3Ω, VGE=±15V, Tj=25oC |
|
182 |
|
ns |
|
tr |
Rise Time |
|
54 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
464 |
|
ns |
|
|
tf |
Fall Time |
|
72 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
10.6 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
25.8 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=300A, RG= 1.3Ω, VGE=±15V, Tj= 125oC |
|
193 |
|
ns |
|
tr |
Rise Time |
|
54 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
577 |
|
ns |
|
|
tf |
Fall Time |
|
113 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
16.8 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
38.6 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=300A, RG= 1.3Ω, VGE=±15V, Tj= 150oC |
|
203 |
|
ns |
|
tr |
Rise Time |
|
54 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
618 |
|
ns |
|
|
tf |
Fall Time |
|
124 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
18.5 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
43.3 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
1200 |
|
A |
D1,D2 Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IC=300A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V |
|
IC=300A,VGE=0V,Tj=125oC |
|
1.65 |
|
|||
|
IC=300A,VGE=0V,Tj=150oC |
|
1.65 |
|
|||
|
Qr |
Recovered Charge |
VCC=600V,IF=300A, -di/dt=6050A/μs,VGE=-15V, Tj=25oC |
|
29 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
318 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
18.1 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=300A, -di/dt=6050A/μs,VGE=-15V, Tj= 125oC |
|
55 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
371 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
28.0 |
|
mJ |
|
|
Qr |
Recovered Charge |
VCC=600V,IF=300A, -di/dt=6050A/μs,VGE=-15V, Tj= 150oC |
|
64 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
390 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
32.8 |
|
mJ |
T3,T4 IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=300A,VGE=15V, Tj=25oC |
|
1.45 |
1.90 |
V |
|
IC=300A,VGE=15V, Tj=125oC |
|
1.60 |
|
|||
|
IC=300A,VGE=15V, Tj=150oC |
|
1.70 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=4.8mA,VCE=VGE, Tj=25oC |
5.1 |
5.8 |
6.5 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.0 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
17.1 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.51 |
|
nF |
|
|
QG |
Gate Charge |
VGE=-15 ﹍+15V |
|
2.88 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=300A, RG=2.4Ω, VGE=±15V, Tj=25oC |
|
88 |
|
ns |
|
tr |
Rise Time |
|
40 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
294 |
|
ns |
|
|
tf |
Fall Time |
|
43 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
1.34 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
8.60 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=300A, RG=2.4Ω, VGE=±15V, Tj=125oC |
|
96 |
|
ns |
|
tr |
Rise Time |
|
48 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
312 |
|
ns |
|
|
tf |
Fall Time |
|
60 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
1.86 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
10.8 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=300A, RG=2.4Ω, VGE=±15V, Tj=150oC |
|
104 |
|
ns |
|
tr |
Rise Time |
|
48 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
318 |
|
ns |
|
|
tf |
Fall Time |
|
60 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
1.98 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
11.3 |
|
mJ |
|
|
ISC |
SC Data |
tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V |
|
1500 |
|
A |
D3,D4 Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=300A,VGE=0V,Tj=25oC |
|
1.55 |
1.95 |
V |
|
IF=300A,VGE=0V,Tj=125oC |
|
1.50 |
|
|||
|
IF=300A,VGE=0V,Tj=150oC |
|
1.45 |
|
|||
|
Qr |
Recovered Charge |
VR=300V,IF=300A, -di/dt=7150A/μs,VGE=-15V Tj=25oC |
|
14.3 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
209 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
3.74 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=300V,IF=300A, -di/dt=7150A/μs,VGE=-15V Tj=125oC |
|
26.4 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
259 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
6.82 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=300V,IF=300A, -di/dt=7150A/μs,VGE=-15V Tj=150oC |
|
30.8 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
275 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
7.70 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per T1,T2 IGBT) Junction-to-Case (per D1,D2 Diode) Junction-to-Case (per T3,T4 IGBT) Junction-to-Case (per D3,D4 Diode) |
|
|
0.093 0.158 0.163 0.299 |
K/W |
|
RthCH |
Case-to-Heatsink (per T1,T2 IGBT) Case-to-Heatsink (per D1,D2 Diode) Case-to-Heatsink (per T3,T4 IGBT) Case-to-Heatsink (per D3,D4 Diode) Case-to-Heatsink (per Module) |
|
0.050 0.083 0.087 0.160 0.010 |
|
K/W |
|
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
|
G |
Weight of Module |
|
340 |
|
g |
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