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GD300TLL120C2S

IGBT Module,1200V 300A; 3-level in one-package

Brand:
STARPOWER
Spu:
GD300TLL120C2S
  • Introduction
Introduction

Features

  • Low VCE(sat)  SPT+ IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175℃
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

 

Typical Applications

  • Solar power
  • UPS

TI,T2 IGBT TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD300TLL120C2S

Units

VCES

Collector-Emitter Voltage  @ Tj=25

1200

V

VGES

Gate-Emitter Voltage  @ Tj=25

±20

V

IC

Collector Current  @ TC=25

@ TC= 100

490

300

A

ICM

Pulsed Collector Current  tp=1ms

600

A

Ptot

Total Power Dissipation  @ Tj=175

1875

W

Off Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25

1200

 

 

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V, Tj=25

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25

 

 

400

nA

 

On Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold Voltage

IC= 12.0mA,VCE=VGE, Tj=25

5.0

6.2

7.0

V

 

VCE(sat)

 

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25

 

2.00

2.45

 

V

IC=300A,VGE=15V, Tj=125

 

2.20

 

Switching Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=300A,  RG=4.7Ω,

VGE=±15V, Tj=25

 

574

 

ns

tr

Rise Time

 

133

 

ns

td(off)

Turn-Off Delay Time

 

563

 

ns

tf

Fall Time

 

120

 

ns

Eon

Turn-On Switching Loss

 

23.9

 

mJ

Eoff

Turn-Off Switching Loss

 

25.3

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=600V,IC=300A,  RG=4.7Ω,

VGE=±15V, Tj=125

 

604

 

ns

tr

Rise Time

 

137

 

ns

td(off)

Turn-Off Delay Time

 

629

 

ns

tf

Fall Time

 

167

 

ns

Eon

Turn-On Switching Loss

 

31.5

 

mJ

Eoff

Turn-Off Switching Loss

 

35.9

 

mJ

Cies

Input Capacitance

VCE=25V,f=1Mhz,

VGE=0V

 

21.2

 

nF

Cres

Reverse Transfer

Capacitance

 

0.94

 

nF

QG

Gate Charge

VCC=600V,IC=300A, VGE=-15 +15V

 

3.1

 

nC

RGint

Internal Gate Resister

 

 

1.0

 

Ω

 

ISC

 

SC Data

tP≤10μs,VGE=15 V,

Tj=125℃,V CC=900V, VCEM≤1200V

 

 

1300

 

 

A

 

 

TI,T2 Diode TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD300TLL120C2S

Units

VRRM

Repetitive Peak Reverse Voltage  @ Tj=25

1200

V

IF

DC Forward Current

300

A

IFRM

Repetitive Peak Forward Current  tp=1ms

600

A

Characteristics Values

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=300A,

VGE=0V

Tj=25

 

1.65

2.15

V

Tj=125

 

1.65

 

Qr

Recovered Charge

IF=300A,

VR=600V,

RG=2.4Ω,

VGE=-15V

Tj=25

 

30

 

μC

Tj=125

 

55

 

IRM

Peak Reverse

Recovery Current

Tj=25

 

210

 

A

Tj=125

 

270

 

Erec

Reverse Recovery Energy

Tj=25

 

13.9

 

mJ

Tj=125

 

26.1

 

T3,T4 IGBT TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD300TLL120C2S

Units

VCES

Collector-Emitter Voltage  @ Tj=25

650

V

VGES

Gate-Emitter Voltage  @ Tj=25

±20

V

IC

Collector Current  @ TC=25

@ TC= 100

480

300

A

ICM

Pulsed Collector Current  tp=1ms

600

A

Ptot

Total Power Dissipation  @ Tj=175

1071

W

Off Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25

650

 

 

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V, Tj=25

 

 

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25

 

 

400

nA

On Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold Voltage

IC=13.2mA,VCE=VGE, Tj=25

5.5

 

7.7

V

 

VCE(sat)

 

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25

 

1.50

1.95

 

V

IC=300A,VGE=15V, Tj=175

 

1.80

 

Switching Characteristics

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

td(on)

Turn-On Delay Time

 

 

VCC=300V,IC=300A,  RG=2.5Ω,

VGE=±15V, Tj=25

 

125

 

ns

tr

Rise Time

 

320

 

ns

td(off)

Turn-Off Delay Time

 

270

 

ns

tf

Fall Time

 

135

 

ns

Eon

Turn-On Switching Loss

 

3.20

 

mJ

Eoff

Turn-Off Switching Loss

 

12.2

 

mJ

td(on)

Turn-On Delay Time

 

 

VCC=300V,IC=300A,  RG=2.5Ω,

VGE=±15V, Tj=125

 

110

 

ns

tr

Rise Time

 

320

 

ns

td(off)

Turn-Off Delay Time

 

320

 

ns

tf

Fall Time

 

145

 

ns

Eon

Turn-On Switching Loss

 

3.50

 

mJ

Eoff

Turn-Off Switching Loss

 

12.8

 

mJ

Cies

Input Capacitance

VCE=30V,f=1Mhz,

VGE=0V

 

25.9

 

nF

Cres

Reverse Transfer

Capacitance

 

0.68

 

nF

QG

Gate Charge

VCC=300V,IC=300A, VGE=15V

 

590

 

nC

RGint

Internal Gate Resister

 

 

1.0

 

Ω

 

ISC

 

SC Data

tP≤6μs,VGE=15V,

Tj=125℃,V CC=360V, VCEM≤650V

 

 

3600

 

 

A

 

 

T3,T4 Diode TC=25 unless otherwise noted

Maximum Rated Values

 

Symbol

Description

GD300TLL120C2S

Units

VRRM

Repetitive Peak Reverse Voltage  @ Tj=25

650

V

IF

DC Forward Current

300

A

IFRM

Repetitive Peak Forward Current  tp=1ms

600

A

Characteristics Values

 

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=300A,

VGE=0V

Tj=25

 

1.40

1.80

V

Tj=125

 

1.40

 

Qr

Recovered Charge

 

IF=300A,

VR=300V,

RG=4.7Ω,

VGE=-15V

Tj=25

 

12.0

 

μC

Tj=125

 

21.2

 

IRM

Peak Reverse

Recovery Current

Tj=25

 

153

 

A

Tj=125

 

185

 

Erec

Reverse Recovery Energy

Tj=25

 

2.65

 

mJ

Tj=125

 

5.12

 

IGBT Module

 

Symbol

Parameter

Min.

Typ.

Max.

Units

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

 

 

V

 

RθJC

Junction-to-Case (per T1,T2 IGBT)

Junction-to-Case (per T1,T2 Diode)

Junction-to-Case (per T3,T4 IGBT)

Junction-to-Case (per T3,T4 Diode)

 

 

0.080

0.158

0.137

0.236

 

K/W

RθCS

Case-to-Sink (Conductive grease applied)

 

0.035

 

K/W

Tjmax

Maximum Junction Temperature

 

 

175

Tjop

Operating Junction Temperature

-40

 

150

TSTG

Storage Temperature Range

-40

 

125

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

 

5.0

5.0

N.m

G

Weight of Module

 

340

 

g

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