Brief introduction
IGBT module, produced by STARPOWER. 1700V 300A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD300SGL170C2S |
Units |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
460 300 |
A |
ICM |
Pulsed Collector Current tp=1ms |
600 |
A |
IF |
Diode Continuous Forward Current |
300 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
PD |
Maximum Power Dissipation @ Tj=175℃ |
2273 |
W |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
Tstg |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
M |
Terminal Connection Torque, Screw M4 |
1.1 to 2.0 |
|
Terminal Connection Torque, Screw M6 |
2.5 to 5.0 |
N.m |
|
Mounting Torque, Screw M6 |
3.0 to 5.0 |
|
|
G |
Weight of Module |
300 |
g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1700 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tj=25℃ |
5.4 |
6.2 |
7.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=300A,VGE=15V, Tj=25℃ |
|
2.50 |
2.95 |
V |
IC=300A,VGE=15V, Tj=125℃ |
|
3.00 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω,VGE=±15V, Tj=25℃ |
|
464 |
|
ns |
tr |
Rise Time |
|
157 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
421 |
|
ns |
|
tf |
Fall Time |
|
290 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
108 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
55.2 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω,VGE=±15V, Tj= 125℃ |
|
483 |
|
ns |
tr |
Rise Time |
|
161 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
465 |
|
ns |
|
tf |
Fall Time |
|
538 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
128 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
83.7 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
20.4 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.72 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,V CC= 1300 V, VCEM≤1700V |
|
960 |
|
A |
QG |
Gate Charge |
VCC=900V,IC=300A, VGE=-15 ﹍+15V |
|
2.4 |
|
μC |
LCE |
Stray Inductance |
|
|
|
20 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=300A |
Tj=25℃ |
|
1.80 |
2.25 |
V |
Tj=125℃ |
|
1.95 |
|
||||
Qr |
Recovered Charge |
IF=300A, VR=900V, RG=4.7Ω, VGE=-15V |
Tj=25℃ |
|
70.3 |
|
μC |
Tj=125℃ |
|
108 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
209 |
|
A |
|
Tj=125℃ |
|
238 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
40.7 |
|
mJ |
|
Tj=125℃ |
|
65.1 |
|
||||
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.066 |
K/W |
RθJC |
Junction-to-Case (per Diode) |
|
0.105 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
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