Home / Products / IGBT module / 1700V
Features
Typical Applications
Absolute Maximum Ratings Te=25℃ unless otherwise noted
|
Symbol |
Description |
GD300HFT170C2S |
Units |
|
Vces |
Collector-Emitter Voltage |
1700 |
V |
|
VGFs |
Gate-Emitter Voltage |
±20 |
V |
|
Ic |
Collector Current @Tc=25℃ @Tc=80℃ |
550 |
A |
|
300 |
|||
|
IcM(1) |
Pulsed Collector Current tp=1ms |
600 |
A |
|
Ir |
Diode Continuous Forward Current |
300 |
A |
|
IM |
Diode Maximum Forward Current |
600 |
A |
|
Pp |
Maximum Power Dissipation @Tj=175℃ |
2083 |
W |
|
Tsc |
Short Circuit Withstand Time @Tj=125℃ |
10 |
μs |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
TsTG |
Storage Temperature Range |
-40 to+125 |
℃ |
|
I²t-value,Diode |
VR=0V,t=10ms,Tj=125℃ |
14500 |
A²s |
|
Viso |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
Mounting Torque |
Power Terminal Screw:M6 |
2.5 to 5.0 |
N.m |
|
Mounting Screw:M6 |
3.0 to 5.0 |
N.m |
Electrical Characteristics of IGBT Te=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
BVcrs |
Collector-Emitter Breakdown Voltage |
VGe=0V,Ic=4.0mA, T=25℃ |
1700 |
|
|
V |
|
IcEs |
Collector Cut-Off Current |
Vce=VcEs,VGE=0V, Tj=25℃ |
|
|
3.0 |
mA |
|
IGrs |
Gate-Emitter Leakage Current |
VGr=VGes,Vcn=0V, T=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
Vcπ(h) |
Gate-Emitter Threshold Voltage |
Ie=12.0mA,Vcr=VGE T=25℃ |
5.2 |
5.8 |
6.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
Ic=300A,VGr=15V, T=25℃ |
|
2.0 |
|
V |
|
Ic=300A,VGr=15V. T=125℃ |
|
2.4 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|||
|
taon) |
Turn-On Delay Time |
Vcc=900V,Ic=300A, Ra=4.72, Vae=±15V, T=25℃ |
|
281 |
|
ns |
|||
|
t |
Rise Time |
|
82 |
|
ns |
||||
|
ta(o) |
Turn-Off Delay Time |
|
801 |
|
ns |
||||
|
tr |
Fall Time |
Vcc=900V,Ic=300A, Rc=4.72, V=±15V T=25℃ |
|
121 |
|
ns |
|||
|
Eon |
Turn-On Switching Loss |
|
70 |
|
mJ |
||||
|
Eofr |
Turn-Off Switching Loss |
|
65 |
|
mJ |
||||
|
ta(on) |
Turn-On Delay Time |
Vcc=900V,Ic=300A, RG=4.72, Vc=±15V T=125℃ |
|
303 |
|
ns |
|||
|
t |
Rise Time |
|
103 |
|
ns |
||||
|
ta(om) |
Turn-Off Delay Time |
|
1002 |
|
ns |
||||
|
tr |
Fall Time |
|
203 |
|
ns |
||||
|
Eon |
Turn-On Switching Loss |
|
105 |
|
mJ |
||||
|
Eor |
Turn-Off Switching Loss |
|
94 |
|
mJ |
||||
|
Cies |
Input Capacitance |
Vce=25V,f=1MHz, VGr=0V |
|
27.0 |
|
nF |
|||
|
Coes |
Output Capacitance |
|
1.1 |
|
nF |
||||
|
Cres |
Reverse Transfer Capacitance |
|
0.9 |
|
nF |
||||
|
Isc |
SC Data |
tsc≤10μs,VGE=15V, T=125℃, Vcc=1000V VcrM≤1700V |
|
1200 |
|
A |
|||
|
RGint |
Internal Gate Resistance |
|
|
2.5 |
|
Ω |
|||
|
LCr |
Stray Inductance |
|
|
|
20 |
nH |
|||
|
RcC'+EE' |
Module Lead Resistance, Terminal to Chip |
Tc=25℃ |
|
0.35 |
|
m2 |
|||
Electrical Characteristics of DIODE Tc=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
Vr |
Diode Forward Voltage |
Iq=300A |
Tj=25℃ |
|
1.8 |
|
V |
|
Ti=125℃ |
|
1.9 |
|
||||
|
Q |
Diode Reverse Recovery Charge |
Ir=300A, Vr=900V, di/dt=-3600A/μs, VGr=-15V |
T=25℃ |
|
77 |
|
μC |
|
Tj=125℃ |
|
131 |
|
||||
|
IRM |
Diode Peak Reverse Recovery Current |
Tj=25℃ |
|
351 |
|
A |
|
|
T=125℃ |
|
383 |
|
||||
|
Eree |
Reverse Recovery Energy |
Tj=25℃ |
|
40 |
|
mJ |
|
|
Tj=125℃ |
|
72 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
Rac |
Junction-to-Case (IGBT Part, per 1/2 Module) |
|
0.072 |
K/W |
|
Rac |
Junction-to-Case (DIODE Part, per 1/2 Module) |
|
0.13 |
K/W |
|
Roc |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
|
Weight |
Weight of Module |
300 |
|
g |
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