IGBT Module，1700A 300A
Brief introduction
IGBT module, produced by STARPOWER. 1700V 300A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC= 100oC |
490 300 |
A |
ICM |
Pulsed Collector Current tp=1ms |
600 |
A |
PD |
Maximum Power Dissipation @ T =175oC |
2027 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
300 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=300A,VGE=15V, Tj=25oC |
|
2.40 |
2.85 |
V |
IC=300A,VGE=15V, Tj=125oC |
|
2.80 |
|
|||
IC=300A,VGE=15V, Tj=150oC |
|
2.90 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC= 12.0mA,VCE=VGE, Tj=25oC |
5.4 |
6.2 |
7.4 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
20.3 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.69 |
|
nF |
|
QG |
Gate Charge |
VGE=- 15…+15V |
|
2.31 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj=25oC |
|
200 |
|
ns |
tr |
Rise Time |
|
97 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
410 |
|
ns |
|
tf |
Fall Time |
|
370 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
82.0 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
60.0 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj= 125oC |
|
250 |
|
ns |
tr |
Rise Time |
|
99 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
630 |
|
ns |
|
tf |
Fall Time |
|
580 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
115 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
90.0 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj= 150oC |
|
260 |
|
ns |
tr |
Rise Time |
|
105 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
670 |
|
ns |
|
tf |
Fall Time |
|
640 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
125 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
100 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC= 1000V, VCEM≤1700V |
|
1200 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=300A,VGE=0V,Tj=25oC |
|
1.80 |
2.25 |
V |
IF=300A,VGE=0V,Tj= 125oC |
|
1.95 |
|
|||
IF=300A,VGE=0V,Tj= 150oC |
|
1.90 |
|
|||
Qr |
Recovered Charge |
VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj=25oC |
|
90.0 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
270 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
45.0 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj= 125oC |
|
135 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
315 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
75.5 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj= 150oC |
|
160 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
330 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
84.0 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC= 100oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
1.10 |
|
mΩ |
RθJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.074 0.121 |
K/W |
RθCS |
Case-to-Sink (per IGBT) Case-to-Sink (per Diode) |
|
0.029 0.047 |
|
K/W |
RθCS |
Case-to-Sink |
|
0.009 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
G |
Weight Module |
|
350 |
|
g |
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