1200V 225A
Brief introduction
IGBT module, produced by STARPOWER. 1200V 225A.
Features
Typical Applications
IGBT-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD225HTT120C7S |
Units |
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
1200 |
V |
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
400 225 |
A |
ICM |
Pulsed Collector Current tp=1ms |
450 |
A |
Ptot |
Total Power Dissipation @ Tj=175℃ |
1442 |
W |
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=9.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.8 |
6.5 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=225A,VGE=15V, Tj=25℃ |
|
1.70 |
2.15 |
V |
IC=225A,VGE=15V, Tj=125℃ |
|
2.00 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=225A, RG=3.3Ω,VGE=±15V, Tj=25℃ |
|
251 |
|
ns |
tr |
Rise Time |
|
89 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
550 |
|
ns |
|
tf |
Fall Time |
|
125 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
/ |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
/ |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=225A, RG=3.3Ω,VGE=±15V, Tj=125℃ |
|
305 |
|
ns |
tr |
Rise Time |
|
100 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
660 |
|
ns |
|
tf |
Fall Time |
|
162 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
15.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
35.9 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1Mhz, VGE=0V |
|
16.0 |
|
nF |
Coes |
Output Capacitance |
|
0.84 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.73 |
|
nF |
|
QG |
Gate Charge |
VCC=600V,IC=225A, VGE=15V |
|
2.1 |
|
μC |
RGint |
Internal Gate Resister |
|
|
3.3 |
|
Ω |
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
900 |
|
A |
DIODE-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD225HTT120C7S |
Units |
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
1200 |
V |
IF |
DC Forward Current @ TC=80℃ |
225 |
A |
IFRM |
Repetitive Peak Forward Current tp=1ms |
450 |
A |
Characteristics Values
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=225A, VGE=0V |
Tj=25℃ |
|
1.65 |
2.15 |
V |
Tj=125℃ |
|
1.65 |
|
||||
Qr |
Recovered Charge |
IF=225A, VR=600V, RG=3.3Ω, VGE=-15V |
Tj=25℃ |
|
22 |
|
μC |
Tj=125℃ |
|
43 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
160 |
|
A |
|
Tj=125℃ |
|
198 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
11.2 |
|
mJ |
|
Tj=125℃ |
|
19.9 |
|
||||
Electrical Characteristics of NTC TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
IGBT Module
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
|
2500 |
|
V |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance,Terminal to Chip @ TC=25℃ |
|
1.10 |
|
mΩ |
RθJC |
Junction-to-Case (per IGBT-inverter) Junction-to-Case (per DIODE-inverter) |
|
|
0.104 0.173 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
|
0.005 |
|
K/W |
Tjmax |
Maximum Junction Temperature |
|
|
175 |
℃ |
TSTG |
Storage Temperature Range |
-40 |
|
125 |
℃ |
Mounting Torque |
Power Terminal Screw:M6 Mounting Screw:M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
G |
Weight of Module |
|
910 |
|
g |
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