GD225HTL120C7S,IGBT Module,6 in one-package,STARPOWER

1200V 225A

Brand:

STARPOWER

Spu:

GD225HTL120C7S

Brief introduction

IGBT module, produced by STARPOWER. 1200V 225A.

Features

Typical Applications

IGBT-inverter TC=25℃ unless otherwise noted

Maximum Rated Values

Symbol	Description	GD225HTL120C7S	Units
VCES	Collector-Emitter Voltage @ Tj=25℃	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25℃ @ TC= 100℃	400 225	A
ICM	Pulsed Collector Current tp=1ms	450	A
Ptot	Total Power Dissipation @ Tj= 175℃	1973	W

Off Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
V(BR)CES	Collector-Emitter Breakdown Voltage	Tj=25℃	1200			V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25℃			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25℃			400	nA

On Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VGE(th)	Gate-Emitter Threshold Voltage	IC=9.0mA,VCE=VGE, Tj=25℃	5.0	6.2	7.0	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC=225A,VGE=15V, Tj=25℃		1.90	2.35	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC=225A,VGE=15V, Tj= 125℃		2.10		V

Switching Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
QG	Gate charge	VGE=- 15…+15V		2.3		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=225A, RG=5.0Ω,VGE= ±15 V, Tj=25℃		168		ns
tr	Rise Time			75		ns
td(off)	Turn-Off Delay Time			440		ns
tf	Fall Time			55		ns
Eon	Turn-On Switching Loss			27.9		mJ
Eoff	Turn-Off Switching Loss			37.2		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=225A, RG=5.0Ω,VGE= ±15 V, Tj= 125℃		176		ns
tr	Rise Time			75		ns
td(off)	Turn-Off Delay Time			510		ns
tf	Fall Time			75		ns
Eon	Turn-On Switching Loss			13.5		mJ
Eoff	Turn-Off Switching Loss			22.5		mJ
Cies	Input Capacitance	VCE=25V,f=1Mhz, VGE=0V		16.6		nF
Coes	Output Capacitance			1.20		nF
Cres	Reverse Transfer Capacitance			0.78		nF
ISC	SC Data	tSC≤10μs,VGE ≤15 V, Tj=125℃,VCC=600V, VCEM≤1200V		1050		A
RGint	Internal Gate Resistance			1.0		Ω

DIODE-inverter TC=25℃ unless otherwise noted

Maximum Rated Values

Symbol	Description	GD225HTL120C7S	Units
VRRM	Collector-Emitter Voltage @ Tj=25℃	1200	V
IF	DC Forward Current @ TC=80℃	225	A
IFRM	Repetitive Peak Forward Current tp=1ms	450	A

Characteristics Values

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=225A,VGE=0V	Tj=25℃		1.80	2.20	V
VF	Diode Forward Voltage	IF=225A,VGE=0V	Tj= 125℃		1.85		V
Qr	Recovered Charge	VR=600 V, IF=225A, RG=5.0Ω, VGE=- 15V	Tj=25℃		30		μC
Qr	Recovered Charge		Tj= 125℃		57		μC
IRM	Peak Reverse Recovery Current		Tj=25℃		195		A
IRM	Peak Reverse Recovery Current		Tj= 125℃		255		A
Erec	Reverse Recovery Energy		Tj=25℃		10.8		mJ
Erec	Reverse Recovery Energy		Tj= 125℃		22.5		mJ

Electrical Characteristics of NTC TC=25℃ unless otherwise noted

IGBT Module

Symbol	Parameter	Min.	Typ.	Max.	Units
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500			V
LCE	Stray Inductance		20		nH
RCC’+EE ’	Module Lead Resistance,Terminal to Chip @ TC=25℃		1.1		mΩ
RθJC	Junction-to-Case (per IGBT) Junction-to-Case (per DIODE)			0.076 0.154	K/W
RθCS	Case-to-Sink (Conductive grease applied)		0.005		K/W
Tjmax	Maximum Junction Temperature			175	℃
TSTG	Storage Temperature Range	-40		125	℃
Mounting Torque	Power Terminal Screw:M5	3.0		6.0	N.m
Mounting Torque	Mounting Screw:M6	3.0		6.0	N.m
Weight	Weight of Module		910		g