1200V 200A,3-level
Brief introduction
IGBT module, 3-level ,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
IGBT T1 T2 T3 T4 TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD200MLT120C2S |
Units |
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
1200 |
V |
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
360 200 |
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
Ptot |
Total Power Dissipation @ Tj=175℃ |
1163 |
W |
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=8.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.8 |
6.5 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=200A,VGE=15V, Tj=25℃ |
|
1.70 |
2.15 |
V |
IC=200A,VGE=15V, Tj=125℃ |
|
2.00 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=3.6Ω,VGE=±15V, Tj=25℃ |
|
248 |
|
ns |
tr |
Rise Time |
|
88 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
540 |
|
ns |
|
tf |
Fall Time |
|
131 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
9.85 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
22.8 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=3.6Ω,VGE=±15V, Tj= 125℃ |
|
298 |
|
ns |
tr |
Rise Time |
|
99 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
645 |
|
ns |
|
tf |
Fall Time |
|
178 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
15.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
34.9 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
14.4 |
|
nF |
Coes |
Output Capacitance |
|
0.75 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.65 |
|
nF |
|
QG |
Gate Charge |
VCC=600V,IC=200A, VGE=-15 ﹍+15V |
|
1.90 |
|
μC |
RGint |
Internal Gate Resister |
|
|
3.8 |
|
Ω |
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,V CC=900V, VCEM≤1200V |
|
800 |
|
A |
Diode D1 D2 D3 D4 TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD200MLT120C2S |
Units |
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
1200 |
V |
IF |
DC Forward Current TC=80℃ |
200 |
A |
IFRM |
Repetitive Peak Forward Current tp=1ms |
400 |
A |
Characteristics Values
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=200A |
Tj=25℃ |
|
1.65 |
2.10 |
V |
Tj=125℃ |
|
1.65 |
|
||||
Qr |
Recovered Charge |
IF=200A, VR=600V, RG=3.6Ω, VGE=-15V |
Tj=25℃ |
|
20.0 |
|
μC |
Tj=125℃ |
|
26.1 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
151 |
|
A |
|
Tj=125℃ |
|
190 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
9.20 |
|
mJ |
|
Tj=125℃ |
|
17.1 |
|
||||
Diode D5 D6 TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol |
Description |
GD200MLT120C2S |
Units |
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
1200 |
V |
IF |
DC Forward Current TC=80℃ |
200 |
A |
IFRM |
Repetitive Peak Forward Current tp=1ms |
400 |
A |
Characteristics Values
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=200A, VGE=0V |
Tj=25℃ |
|
1.65 |
2.10 |
V |
Tj=125℃ |
|
1.65 |
|
||||
Qr |
Recovered Charge |
IF=200A, VR=600V, RG=3.6Ω, VGE=-15V |
Tj=25℃ |
|
20.0 |
|
μC |
Tj=125℃ |
|
26.1 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
151 |
|
A |
|
Tj=125℃ |
|
190 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
9.20 |
|
mJ |
|
Tj=125℃ |
|
17.1 |
|
||||
IGBT Module
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
|
|
V |
|
RθJC |
Junction-to-Case (per IGBT T1 T2 T3 T4) Junction-to-Case (per Diode D1 D2 D3 D4) Junction-to-Case (per Diode D5 D6) |
|
|
0.129 0.237 0.232 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
|
0.035 |
|
K/W |
Tjmax |
Maximum Junction Temperature |
|
|
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 |
|
150 |
|
TSTG |
Storage Temperature Range |
-40 |
|
125 |
℃ |
Mounting Torque |
Power Terminal Screw:M6 Mounting Screw:M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
Weight |
Weight Module |
|
340 |
|
g |
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