1200V 200A
Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±30 |
V |
IC |
Collector Current @ TC=25℃ @ TC=100℃ |
330 200 |
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
PD |
Maximum Power Dissipation @ Tj=175℃ |
1103 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
400 |
A |
Module
Symbol |
Description |
Values |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=200A,VGE=15V, Tj=25℃ |
|
1.70 |
2.15 |
V |
IC=200A,VGE=15V, Tj=125℃ |
|
1.95 |
|
|||
IC=200A,VGE=15V, Tj=150℃ |
|
2.00 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=8.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.8 |
6.5 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.0 |
|
Ω |
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
18.2 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.56 |
|
nF |
|
QG |
Gate Charge |
VGE=15V |
|
1.20 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj=25℃ |
|
213 |
|
ns |
tr |
Rise Time |
|
64 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
280 |
|
ns |
|
tf |
Fall Time |
|
180 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
4.10 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
16.3 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj=125℃ |
|
285 |
|
ns |
tr |
Rise Time |
|
78 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
363 |
|
ns |
|
tf |
Fall Time |
|
278 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
7.40 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
23.0 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj=150℃ |
|
293 |
|
ns |
tr |
Rise Time |
|
81 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
374 |
|
ns |
|
tf |
Fall Time |
|
327 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
8.70 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
25.2 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150℃,VCC=900V, VCEM≤1200V |
|
800 |
|
A |
Diode Characteristics TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IC=200A,VGE=0V,Tj=25℃ |
|
2.15 |
2.55 |
V |
IC=200A,VGE=0V,Tj=125℃ |
|
2.20 |
|
|||
IC=200A,VGE=0V,Tj=150℃ |
|
2.15 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=200A, RG=3.0Ω,VGE=-15V Tj=25℃ |
|
16.2 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
169 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
10.2 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=200A, RG=3.0Ω,VGE=-15V Tj=125℃ |
|
24.4 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
204 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
16.2 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=200A, RG=3.0Ω,VGE=-15V Tj=150℃ |
|
31.4 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
222 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
19.4 |
|
mJ |
Module Characteristics TC=25℃ unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
26 |
nH |
RCC’+EE’ |
Module Lead Resistance,Terminal to Chip |
|
0.62 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.136 0.194 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.156 0.223 0.046 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
200 |
|
g |
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