GD200HFT120C5S_G8,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 200A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±30	V
IC	Collector Current @ TC=25oC @ TC= 100oC	310 200	A
ICM	Pulsed Collector Current tp=1ms	400	A
PD	Maximum Power Dissipation @ Tj=175oC	1034	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	200	A
IFM	Diode Maximum Forward Current tp=1ms	400	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=200A,VGE=15V, Tj=25oC		1.70	2.15	V
		IC=200A,VGE=15V, Tj=125oC		1.95
		IC=200A,VGE=15V, Tj=150oC		2.00
VGE(th)	Gate-Emitter Threshold Voltage	IC=8.0mA,VCE=VGE, Tj=25oC	5.0	5.8	6.5	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=30V,f=1MHz, VGE=0V		18.2		nF
Cres	Reverse Transfer Capacitance	VCE=30V,f=1MHz, VGE=0V		0.56		nF
QG	Gate Charge	VGE=15V		1.20		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj=25oC		213		ns
tr	Rise Time			64		ns
td(off)	Turn-Off Delay Time			280		ns
tf	Fall Time			180		ns
Eon	Turn-On Switching Loss			4.10		mJ
Eoff	Turn-Off Switching Loss			16.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj= 125oC		285		ns
tr	Rise Time			78		ns
td(off)	Turn-Off Delay Time			363		ns
tf	Fall Time			278		ns
Eon	Turn-On Switching Loss			7.40		mJ
Eoff	Turn-Off Switching Loss			23.0		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=3.0Ω,VGE=±15V, Tj= 150oC		293		ns
tr	Rise Time			81		ns
td(off)	Turn-Off Delay Time			374		ns
tf	Fall Time			327		ns
Eon	Turn-On Switching Loss			8.70		mJ
Eoff	Turn-Off Switching Loss			25.2		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V		800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=200A,VGE=0V,Tj=25oC		1.70	2.15	V
		IF=200A,VGE=0V,Tj= 125oC		1.65
		IF=200A,VGE=0V,Tj= 150oC		1.65
Qr	Recovered Charge	VCC=600V,IF=200A, -di/dt=5500A/μs,VGE=- 15V, Tj=25oC		17.5		μC
IRM	Peak Reverse Recovery Current			245		A
Erec	Reverse Recovery Energy			8.00		mJ
Qr	Recovered Charge	VCC=600V,IF=200A, -di/dt=5500A/μs,VGE=- 15V, Tj= 125oC		32.0		μC
IRM	Peak Reverse Recovery Current			260		A
Erec	Reverse Recovery Energy			14.0		mJ
Qr	Recovered Charge	VCC=600V,IF=200A, -di/dt=5500A/μs,VGE=- 15V, Tj= 150oC		37.5		μC
IRM	Peak Reverse Recovery Current			265		A
Erec	Reverse Recovery Energy			15.3		mJ

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		30		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		2.20		mΩ
RthJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			0.145 0.243	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.064 0.107 0.02		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5	3.0 2.5		6.0 5.0	N.m
G	Weight of Module		200		g