1200V 200A
Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD200HFT120C2S_T4 |
Units |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
320 200 |
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
IF |
Diode Continuous Forward Current |
200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
400 |
A |
PD |
Maximum Power Dissipation @ Tj=175℃ |
1103 |
W |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
Mounting Torque |
Power Terminal Screw:M6 Mounting Screw:M6 |
2.5 to 5.0 3.0 to 5.0 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=7.6mA,VCE=VGE, Tj=25℃ |
5.2 |
5.8 |
6.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=200A,VGE=15V, Tj=25℃ |
|
1.75 |
2.20 |
V |
IC=200A,VGE=15V, Tj=125℃ |
|
2.05 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=2.4Ω,VGE=±15V, Tj=25℃ |
|
162 |
|
ns |
tr |
Rise Time |
|
39 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
451 |
|
ns |
|
tf |
Fall Time |
|
98 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
10.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
13.9 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=2.4Ω,VGE=±15V, Tj=125℃ |
|
171 |
|
ns |
tr |
Rise Time |
|
45 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
522 |
|
ns |
|
tf |
Fall Time |
|
160 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
15.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
20.0 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1Mhz, VGE=0V |
|
12.3 |
|
nF |
Coes |
Output Capacitance |
|
0.81 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.69 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
800 |
|
A |
QG |
Gate Charge |
VGE=-15 ﹍+15V |
|
1.81 |
|
μC |
RGint |
Internal Gate Resistance |
|
|
3.8 |
|
Ω |
LCE |
Stray Inductance |
|
|
|
20 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.35 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=200A VGE=0V |
Tj=25℃ |
|
1.65 |
2.10 |
V |
Tj=125℃ |
|
1.65 |
|
||||
Qr |
Recovered Charge |
IF=200A, VR=600V, RG=2.4Ω, VGE=-15V |
Tj=25℃ |
|
20.1 |
|
μC |
Tj=125℃ |
|
32.0 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
232 |
|
A |
|
Tj=125℃ |
|
248 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
9.00 |
|
mJ |
|
Tj=125℃ |
|
17.6 |
|
||||
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.136 |
K/W |
RθJC |
Junction-to-Case (per Diode) |
|
0.202 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
Weight |
Weight Module |
300 |
|
g |
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