GD200HFT120C1S_G8,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 200A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±30	V
IC	Collector Current @ TC=25oC @ TC=85oC	285 200	A
ICM	Pulsed Collector Current tp=1ms	400	A
PD	Maximum Power Dissipation @ T =175oC	882	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	200	A
IFM	Diode Maximum Forward Current tp=1ms	400	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=200A,VGE=15V, Tj=25oC		1.70	2.15	V
		IC=200A,VGE=15V, Tj=125oC		1.95
		IC=200A,VGE=15V, Tj=150oC		2.00
VGE(th)	Gate-Emitter Threshold Voltage	IC=8.0mA,VCE=VGE, Tj=25oC	5.0	5.9	6.5	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			200	nA
RGint	Internal Gate Resistance			2.0		Ω
Cies	Input Capacitance	VCE=30V,f=1MHz, VGE=0V		17.0		nF
Cres	Reverse Transfer Capacitance	VCE=30V,f=1MHz, VGE=0V		0.55		nF
QG	Gate Charge	VGE=-15…+15V		1.07		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG= 1.0Ω,VGE=±15V, Tj=25oC		296		ns
tr	Rise Time			77		ns
td(off)	Turn-Off Delay Time			391		ns
tf	Fall Time			172		ns
Eon	Turn-On Switching Loss			4.25		mJ
Eoff	Turn-Off Switching Loss			16.2		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG= 1.0Ω,VGE=±15V, Tj= 125oC		272		ns
tr	Rise Time			79		ns
td(off)	Turn-Off Delay Time			423		ns
tf	Fall Time			232		ns
Eon	Turn-On Switching Loss			6.45		mJ
Eoff	Turn-Off Switching Loss			22.6		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG= 1.0Ω,VGE=±15V, Tj= 150oC		254		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time			430		ns
tf	Fall Time			280		ns
Eon	Turn-On Switching Loss			8.30		mJ
Eoff	Turn-Off Switching Loss			24.3		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V		800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=200A,VGE=0V,Tj=25oC		1.70	2.15	V
		IF=200A,VGE=0V,Tj= 125oC		1.65
		IF=200A,VGE=0V,Tj= 150oC		1.65
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj=25oC		18.5		μC
IRM	Peak Reverse Recovery Current			240		A
Erec	Reverse Recovery Energy			8.10		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj= 125oC		33.5		μC
IRM	Peak Reverse Recovery Current			250		A
Erec	Reverse Recovery Energy			14.5		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj= 150oC		38.5		μC
IRM	Peak Reverse Recovery Current			260		A
Erec	Reverse Recovery Energy			16.0		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			30	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.75		mΩ
RthJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			0.170 0.280	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.161 0.265 0.050		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		150		g