Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD200HFK60C8SN |
Units |
VCES |
Collector-Emitter Voltage |
600 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
283 200 |
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
IF |
Diode Continuous Forward Current |
200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
400 |
A |
PD |
Maximum Power Dissipation @ Tj=150℃ |
714 |
W |
Tjmax |
Maximum Junction Temperature |
150 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +125 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
Mounting Torque |
Power Terminal Screw:M5 Mounting Screw:M5 |
2.5 to 3.5 2.5 to 3.5 |
N.m |
Weight |
Weight of Module |
200 |
g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
600 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=500μA,VCE=VGE, Tj=25℃ |
3.5 |
4.5 |
5.5 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=200A,VGE=15V, Tj=25℃ |
|
1.80 |
2.25 |
V |
IC=200A,VGE=15V, Tj=125℃ |
|
2.10 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=300V,IC=200A, RG=6.8Ω,VGE=±15V, Tj=25℃ |
|
320 |
|
ns |
tr |
Rise Time |
|
123 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
318 |
|
ns |
|
tf |
Fall Time |
|
90 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
2.79 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
5.08 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=200A, RG=6.8Ω,VGE=±15V, Tj=125℃ |
|
339 |
|
ns |
tr |
Rise Time |
|
125 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
344 |
|
ns |
|
tf |
Fall Time |
|
113 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
3.00 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
6.95 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=30V,f=1MHz, VGE=0V |
|
16.9 |
|
nF |
Coes |
Output Capacitance |
|
0.88 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.42 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=360V, VCEM≤600V |
|
1800 |
|
A |
QG |
Gate Charge |
VCC=400V,IC=200A, VGE=15V |
|
0.72 |
|
μC |
RGint |
Internal Gate Resistance |
|
|
2.35 |
|
Ω |
LCE |
Stray Inductance |
|
|
|
22 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.65 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=200A |
Tj=25℃ |
|
1.33 |
1.78 |
V |
Tj=125℃ |
|
1.30 |
|
||||
Qr |
Recovered Charge |
IF=200A, VR=300V, RG=6.8Ω, VGE=-15V |
Tj=25℃ |
|
9.3 |
|
μC |
Tj=125℃ |
|
13.2 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
112 |
|
A |
|
Tj=125℃ |
|
125 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
2.09 |
|
mJ |
|
Tj=125℃ |
|
3.22 |
|
||||
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.175 |
K/W |
RθJC |
Junction-to-Case (per Diode) |
|
0.317 |
K/W |
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