Home / Products / IGBT module / 1200V
Features
Low VCE(sat) SPT+ IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
AC inverter drives
Switching mode power supplies
Electronic welders
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1600SGL120C3S |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
@ TC=25℃ @ TC=80℃ |
2500 |
A |
|
1600 |
|||
|
ICM(1) |
Pulsed Collector Current tp= 1ms |
3200 |
A |
|
IF |
Diode Continuous Forward Current |
1600 |
A |
|
IFM |
Diode Maximum Forward Current |
3200 |
A |
|
PD |
Maximum power Dissipation @ Tj=150℃ |
8.3 |
kW |
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
Tj |
Maximum Junction Temperature |
150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value, Diode |
VR=0V,t=10ms,Tj=125℃ |
300 |
kA2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M8 |
1.8 to 2.1 8.0 to 10 |
N.m |
|
Mounting Screw:M6 |
4.25 to 5.75 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
BV CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=64mA,VCE=VGE, Tj=25℃ |
5.0 |
6.2 |
7.0 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=1600A,VGE=15V, Tj=25℃ |
|
1.8 |
|
V |
|
IC=1600A,VGE=15V, Tj=125℃ |
|
2.0 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
Qge |
Gate charge |
VGE=-15…+15V |
|
16.8 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=1600A, RG=0.82Ω, VGE=±15V,Tj=25℃ |
|
225 |
|
ns |
|
tr |
Rise Time |
|
105 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1100 |
|
ns |
|
|
tf |
Fall Time |
|
100 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
148 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
186 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=1600A, RG=0.82Ω, VGE=±15V,Tj=125℃ |
|
235 |
|
ns |
|
tr |
Rise Time |
|
105 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1160 |
|
ns |
|
|
tf |
Fall Time |
|
105 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
206 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
239 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
119 |
|
nF |
|
Coes |
Output Capacitance |
|
8.32 |
|
nF |
|
|
Cres |
Reverse Transfer Capacitance |
|
5.44 |
|
nF |
|
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj=125℃, VCC=900V, VCEM ≤1200V |
|
7000 |
|
A |
|
RGint |
Internal Gate Resistance |
|
|
0.1 |
|
Ω |
|
LCE |
Stray Inductance |
|
|
12 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
TC=25℃ |
|
0.19 |
|
mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF=1600A |
Tj=25℃ |
|
2.1 |
|
V |
|
Tj=125℃ |
|
2.2 |
|
||||
|
Qr |
Recovered Charge |
IF=1600A, VR=600V, di/dt=-7500A/μs, VGE=-15V |
Tj=25℃ |
|
73 |
|
μC |
|
Tj=125℃ |
|
175 |
|
||||
|
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
510 |
|
A |
|
|
Tj=125℃ |
|
790 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
17 |
|
mJ |
|
|
Tj=125℃ |
|
46 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (IGBT Part, per Module) |
|
15 |
K/kW |
|
RθJC |
Junction-to-Case (Diode Part, per Module) |
|
26 |
K/kW |
|
RθCS |
Case-to-Sink (Conductive grease applied, per Module) |
6 |
|
K/kW |
|
Weight |
Weight of Module |
1500 |
|
g |
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