Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1200SGL120C3S |
Units |
|
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
|
IC |
Collector Current |
@ TC=25℃ @ TC= 100℃ |
1900 |
A |
|
1200 |
||||
|
ICM(1) |
Pulsed Collector Current tp= 1ms |
2400 |
A |
|
|
IF |
Diode Continuous Forward Current |
1200 |
A |
|
|
IFM |
Diode Maximum Forward Current |
2400 |
A |
|
|
PD |
Maximum power Dissipation @ Tj= 175℃ |
8823 |
W |
|
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
|
Tj |
Operating Junction Temperature |
-40 to +150 |
℃ |
|
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
|
I2t-value, Diode |
VR=0V, t=10ms, Tj=125℃ |
300 |
kA2s |
|
|
VISO |
Isolation Voltage RMS, f=50Hz, t=1min |
2500 |
V |
|
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M8 |
1.7 to 2.3 8.0 to 10 |
N.m |
|
|
Mounting Screw:M6 |
4.25 to 5.75 |
N.m |
||
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
BV CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
800 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=48.0mA,VCE=VGE, Tj=25℃ |
5.0 |
6.5 |
7.0 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC= 1200A,VGE=15V, Tj=25℃ |
|
1.9 |
|
V |
|
IC= 1200A,VGE=15V, Tj= 125℃ |
|
2.1 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
RGint |
Internal gate resistor |
Tj=25℃ |
|
1.2 |
|
Ω |
|
Qge |
Gate charge |
IC= 1200A,VCE=600V, VGE=- 15…+15V |
|
12.5 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=1200A, RG=0.82Ω,VGE = ±15V, Tj=25℃ |
|
790 |
|
ns |
|
tr |
Rise Time |
|
170 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1350 |
|
ns |
|
|
tf |
Fall Time |
|
180 |
|
ns |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=1200A, RG=0.82Ω,VGE =±15 V, Tj= 125℃ |
|
850 |
|
ns |
|
tr |
Rise Time |
|
170 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1500 |
|
ns |
|
|
tf |
Fall Time |
|
220 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
155 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
190 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V, f=1MHz, VGE=0V |
|
92.0 |
|
nF |
|
Coes |
Output Capacitance |
|
8.40 |
|
nF |
|
|
Cres |
Reverse Transfer Capacitance |
|
6.10 |
|
nF |
|
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj=125℃, VCC=900V, VCEM≤1200V |
|
7000 |
|
A |
|
LCE |
Stray Inductance |
|
|
15 |
|
nH |
|
RCC’+EE ’ |
Module lead resistance, terminal to chip |
TC=25℃,per switch |
|
0.10 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF= 1200A |
Tj=25℃ |
|
1.9 |
|
V |
|
Tj= 125℃ |
|
2.1 |
|
||||
|
Qr |
Diode Reverse Recovery Charge |
IF= 1200A, VR=600V, di/dt=-6800A/μs, VGE=- 15V |
Tj=25℃ |
|
110 |
|
μC |
|
Tj= 125℃ |
|
220 |
|
||||
|
IRM |
Diode Peak Reverse Recovery Current |
Tj=25℃ |
|
760 |
|
A |
|
|
Tj= 125℃ |
|
990 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
47 |
|
mJ |
|
|
Tj= 125℃ |
|
82 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (IGBT Part, per Module) |
|
0.017 |
K/W |
|
RθJC |
Junction-to-Case (Diode Part, per Module) |
|
0.025 |
K/W |
|
RθCS |
Case-to-Sink (Conductive grease applied, per Module) |
0.006 |
|
K/W |
|
Weight |
Weight of Module |
1500 |
|
g |
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.
EN
