Home / Products / IGBT module / 1200V
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1200HFL120C3S |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
1900 1200 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
2400 |
A |
|
IF |
Diode Continuous Forward Current |
1200 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
2400 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175℃ |
6.41 |
kW |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
Tjop |
Maximum Junction Temperature |
-40 to +150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
M |
Terminal Connection Torque, Screw M4 |
1.8 to 2.1 |
|
|
Terminal Connection Torque, Screw M8 |
8.0 to 10 |
N.m |
|
|
Mounting Torque, Screw M6 |
4.25 to 5.75 |
|
|
|
G |
Weight of Module |
1500 |
g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=48.0mA,VCE=VGE, Tj=25℃ |
5.4 |
|
7.4 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC= 1200A,VGE=15V, Tj=25℃ |
|
1.95 |
2.40 |
V |
|
IC= 1200A,VGE=15V, Tj=125℃ |
|
2.10 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC= 1200A, RGon=2. 1Ω,RGoff=4.5Ω, VGE=±15 V,Tj=25℃ |
|
200 |
|
ns |
|
tr |
Rise Time |
|
135 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1050 |
|
ns |
|
|
tf |
Fall Time |
|
130 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
136 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
160 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC= 1200A, RGon=2. 1Ω,RGoff=4.5Ω, VGE=±15 V,Tj= 125℃ |
|
220 |
|
ns |
|
tr |
Rise Time |
|
190 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
1150 |
|
ns |
|
|
tf |
Fall Time |
|
140 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
184 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
208 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
84.8 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
3.76 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
4500 |
|
A |
|
RGint |
Internal Gate Resistance |
|
|
2.7 |
|
Ω |
|
LCE |
Stray Inductance |
|
|
20 |
|
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF= 1200A |
Tj=25℃ |
|
1.65 |
2.20 |
V |
|
Tj=125℃ |
|
1.75 |
|
||||
|
Qr |
Recovered Charge |
IF= 1200A, VR=600V, RGon=2. 1Ω, VGE=-15V |
Tj=25℃ |
|
400 |
|
μC |
|
Tj=125℃ |
|
680 |
|
||||
|
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
1400 |
|
A |
|
|
Tj=125℃ |
|
1840 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
160 |
|
mJ |
|
|
Tj=125℃ |
|
296 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (per IGBT) |
|
23.4 |
K/kW |
|
RθJC |
Junction-to-Case (per Diode) |
|
46.1 |
K/kW |
|
RθCS |
Case-to-Sink (Conductive grease applied) |
6 |
|
K/kW |
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