DG75X12T2

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC   @ TC=100oC

150

75

A

ICM

Pulsed Collector Current  tp  limited by Tvjmax

225

A

PD

Maximum Power Dissipation  @ Tvj=175oC

852

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

75

A

IFM

Pulsed Collector Current  tp  limited by Tvjmax

225

A

Symbol

Description

Values

Unit

Tvjop

Operating Junction Temperature

-40 to +175

oC

TSTG

Storage Temperature Range

-55 to +150

oC

TS

Soldering Temperature,1.6mm from case for 10s

260

oC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=75A,VGE=15V, Tvj=25oC

1.75

2.20

V

IC=75A,VGE=15V, Tvj=150oC

2.10

IC=75A,VGE=15V, Tvj=175oC

2.20

VGE(th)

Gate-Emitter Threshold Voltage

IC=3.00mA,VCE=VGE, Tvj=25oC

5.0

5.8

6.5

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

250

μA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

100

nA

RGint

Internal Gate Resistance

2.0

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

6.58

nF

Coes

Output Capacitance

0.40

Cres

Reverse Transfer Capacitance

0.19

nF

QG

Gate Charge

VGE=-15…+15V

0.49

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=75A,    RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=25oC

41

ns

tr

Rise Time

135

ns

td(off)

Turn-Off Delay Time

87

ns

tf

Fall Time

255

ns

Eon

Turn-On Switching Loss

12.5

mJ

Eoff

Turn-Off Switching Loss

3.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=75A,    RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=150oC

46

ns

tr

Rise Time

140

ns

td(off)

Turn-Off Delay Time

164

ns

tf

Fall Time

354

ns

Eon

Turn-On Switching Loss

17.6

mJ

Eoff

Turn-Off Switching Loss

6.3

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=75A,    RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=175oC

46

ns

tr

Rise Time

140

ns

td(off)

Turn-Off Delay Time

167

ns

tf

Fall Time

372

ns

Eon

Turn-On Switching Loss

18.7

mJ

Eoff

Turn-Off Switching Loss

6.7

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=175oC,VCC=800V, VCEM≤1200V

300

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=75A,VGE=0V,Tvj=25oC

1.75

2.20

V

IF=75A,VGE=0V,Tvj=150oC

1.75

IF=75A,VGE=0V,Tvj=175oC

1.75

trr

Diode Reverse  Recovery Time

VR=600V,IF=75A,

-di/dt=370A/μs,VGE=-15V, Ls=40nH,

Tvj=25oC

267

ns

Qr

Recovered Charge

4.2

μC

IRM

Peak Reverse

Recovery Current

22

A

Erec

Reverse Recovery Energy

1.1

mJ

trr

Diode Reverse  Recovery Time

VR=600V,IF=75A,

-di/dt=340A/μs,VGE=-15V, Ls=40nH,

Tvj=150oC

432

ns

Qr

Recovered Charge

9.80

μC

IRM

Peak Reverse

Recovery Current

33

A

Erec

Reverse Recovery Energy

2.7

mJ

trr

Diode Reverse  Recovery Time

VR=600V,IF=75A,

-di/dt=320A/μs,VGE=-15V, Ls=40nH,

Tvj=175oC

466

ns

Qr

Recovered Charge

11.2

μC

IRM

Peak Reverse

Recovery Current

35

A

Erec

Reverse Recovery Energy

3.1

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per IGBT) Junction-to-Case (per Diode)

0.176 0.371

K/W

RthJA

Junction-to-Ambient

40

K/W