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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 110oC |
50 25 |
A |
|
ICM |
Pulsed Collector Current tp limited by Tjmax |
100 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
573 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current @ TC= 110oC |
25 |
A |
|
IFM |
Diode Maximum Forward Current tp limited by Tjmax |
100 |
A |
Discrete
|
Symbol |
Description |
Values |
Unit |
|
Tjop |
Operating Junction Temperature |
-40 to +175 |
oC |
|
TSTG |
Storage Temperature Range |
-55 to +150 |
oC |
|
TS |
Soldering Temperature,1.6mm from case for 10s |
260 |
oC |
|
M |
Mounting Torque, Screw M3 |
0.6 |
N.m |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=25A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
|
IC=25A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
|
IC=25A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=0.63mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
0 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
2.59 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.07 |
|
nF |
|
|
QG |
Gate Charge |
VGE=-15…+15V |
|
0.19 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=25oC |
|
28 |
|
ns |
|
tr |
Rise Time |
|
17 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
196 |
|
ns |
|
|
tf |
Fall Time |
|
185 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
1.71 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
1.49 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=125oC |
|
28 |
|
ns |
|
tr |
Rise Time |
|
21 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
288 |
|
ns |
|
|
tf |
Fall Time |
|
216 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
2.57 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
2.21 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=150oC |
|
28 |
|
ns |
|
tr |
Rise Time |
|
22 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
309 |
|
ns |
|
|
tf |
Fall Time |
|
227 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
2.78 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
2.42 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
100 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=25A,VGE=0V,Tj=25oC |
|
2.20 |
2.65 |
V |
|
IF=25A,VGE=0V,Tj= 125oC |
|
2.30 |
|
|||
|
IF=25A,VGE=0V,Tj= 150oC |
|
2.25 |
|
|||
|
Qr |
Recovered Charge |
VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj=25oC |
|
1.43 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
34 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
0.75 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj= 125oC |
|
2.4 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
42 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
1.61 |
|
mJ |
|
|
Qr |
Recovered Charge |
VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj= 150oC |
|
2.6 |
|
μC |
|
IRM |
Peak Reverse Recovery Current |
|
44 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
2.10 |
|
mJ |
Discrete Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.262 0.495 |
K/W |
|
RthJA |
Junction-to-Ambient |
|
40 |
|
K/W |
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