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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
650 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=135oC |
240 120 |
A |
|
ICM |
Pulsed Collector Current tp limited by Tjmax |
360 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
893 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
650 |
V |
|
IF |
Diode Continuous Forward Current @ TC=25oC @ TC=80oC |
177 120 |
A |
|
IFM |
Diode Maximum Forward Current tp limited by Tjmax |
360 |
A |
Discrete
|
Symbol |
Description |
Values |
Unit |
|
Tjop |
Operating Junction Temperature |
-40 to +175 |
oC |
|
TSTG |
Storage Temperature Range |
-55 to +150 |
oC |
|
TS |
Soldering Temperature,1.6mm from case for 10s |
260 |
oC |
IGBT Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=120A,VGE=15V, Tj=25oC |
|
1.40 |
1.85 |
V |
|
IC=120A,VGE=15V, Tj=150oC |
|
1.70 |
|
|||
|
IC=120A,VGE=15V, Tj=175oC |
|
1.75 |
|
|||
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=1.92mA,VCE=VGE, Tj=25oC |
5.1 |
5.8 |
6.5 |
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
250 |
uA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
200 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
/ |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
14.1 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.42 |
|
nF |
|
|
QG |
Gate Charge |
VGE=-15 …+15V |
|
0.86 |
|
uC |
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=25oC |
|
68 |
|
ns |
|
tr |
Rise Time |
|
201 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
166 |
|
ns |
|
|
tf |
Fall Time |
|
54 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
7.19 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
2.56 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=150oC |
|
70 |
|
ns |
|
tr |
Rise Time |
|
207 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
186 |
|
ns |
|
|
tf |
Fall Time |
|
106 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
7.70 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
2.89 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=175oC |
|
71 |
|
ns |
|
tr |
Rise Time |
|
211 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
195 |
|
ns |
|
|
tf |
Fall Time |
|
139 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
7.80 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
2.98 |
|
mJ |
|
|
ISC |
SC Data |
tP≤6μs,VGE=15V, Tj=150 oC,VCC=300V, VCEM≤650V |
|
600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=120A,VGE=0V,Tj=25oC |
|
1.65 |
2.10 |
V |
|
IF=120A,VGE=0V,Tj=150oC |
|
1.60 |
|
|||
|
IF=120A,VGE=0V,Tj=175oC |
|
1.60 |
|
|||
|
trr |
Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=25oC |
|
184 |
|
ns |
|
Qr |
Recovered Charge |
|
1.65 |
|
μC |
|
|
IRM |
Peak Reverse Recovery Current |
|
17.2 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
0.23 |
|
mJ |
|
|
trr |
Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=150oC |
|
221 |
|
ns |
|
Qr |
Recovered Charge |
|
3.24 |
|
μC |
|
|
IRM |
Peak Reverse Recovery Current |
|
23.1 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
0.53 |
|
mJ |
|
|
trr |
Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=175oC |
|
246 |
|
ns |
|
Qr |
Recovered Charge |
|
3.98 |
|
μC |
|
|
IRM |
Peak Reverse Recovery Current |
|
26.8 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
|
0.64 |
|
mJ |
Discrete Characteristics TC=25oC unless otherwise noted
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.168 0.369 |
K/W |
|
RthJA |
Junction-to-Ambient |
|
40 |
|
K/W |
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