YMIF3600-17,IGBT modul,Yuqori oqimli igbt modul, bitta o'chirish IGBT,CRRC

Parametr

Simvol

Shartlar

Min

Maksimal

BIT

Kollektor-emitter kuchlanishi

VCES

VGE =0V,Tvj ≥25°C

1700

V

DC kollektor oqimi

IC

TC =80°C

3600

A

Pik kollektor oqimi

ICM

tp=1ms,Tc=80°C

7200

A

Chiqargichning kuchlanishi

VGES

-20

20

V

Jami quvvat yo'qotilishi

Ptot

TC =25°C, har bir o'zgarish (IGBT)

17800

W

DC oldinga oqim

IF

3600

A

Pik oldinga oqim

IFRM

tp=1ms

7200

A

Surge oqimi

IFSM

VR =0V,Tvj =125°C,tp=10ms, yarim-sinusi to'lqini

18000

A

IGBT qisqa tutashuv SOA IGBT

tpsc

VCC =1200V,VCEMCHIP≤1700V VGE ≤15V,Tvj≤125°C

10

μs

Izolyatsiya kuchlanishi

Visol

1min,f=50Hz

4000

V

Junction harorati

Tvj

175

℃

Kesish ishlash harorati

Tvj(op)

-50

150

℃

Korpus harorati

TC

-50

125

℃

Saqlanish harorati

TSTG

-50

125

℃

O'rnatish momentlari

ms

4

6

Nm

Mt1

8

10

Mt2

2

3

Parametr

Simvol

Shartlar

Min

TUR

Maksimal

BIT

Kollektor (- emitter) qulash Voltaj

V(BR) CES

VGE =0V,IC=10mA, Tvj=25°C

1700

V

Kollektsioner-Emitter To'yingan Kuchlanishi

VCEsat

IC =3600A, VGE =15V

Tvj= 25°C

2.5

V

Tvj=125°C

3.0

V

Tvj=150°C

3.1

V

Kollektorni o'chirish joriy

ICES

VCE =1700V, VGE =0V

Tvj= 25°C

10

mA

Tvj=125°C

100

mA

Tvj=150°C

170

mA

Darvoza oqimi

IGES

VCE =0V,VGE =20V, Tvj =125°C

-500

500

nA

Darvozani-emitterning chegara kuchlanishi

VGE (oʻn)

IC =240mA,VCE =VGE, Tvj =25°C

5.3

7.3

V

Darvoza zaryadi

Qg

IC =2400A,VCE =900V, VGE =-15V … 15V

21.0

µC

Kirish sig'imi

Cies

VCE =25V,VGE =0V, f=1MHz,Tvj =25°C

239

NF

Chiqarish quvvati

Koʻz

20.9

Teskari o'tkazish sig'imi

Cres

9.24

O'chirish kechikish vaqti

td(on)

VCC =900V, IC =3600A, RG =2.2Ω , VGE =±15V, Lσ=280nH,

Tvj = 25 °C

1200

ns

Tvj = 125 °C

1500

Tvj = 150 °C

1600

O'sish vaqti

tr

Tvj = 25 °C

1400

Tvj = 125 °C

1600

Tvj = 150 °C

1700

O'chirish kechikish vaqti

td(off)

Tvj = 25 °C

3000

ns

Tvj = 125 °C

3500

Tvj = 150 °C

3700

Pasayish vaqti

tf

Tvj = 25 °C

500

Tvj = 125 °C

560

Tvj = 150 °C

620

Yoqish o'zgarish yo'qotish energiyasi

EON

Tvj = 25 °C

2700

mJ

Tvj = 125 °C

2900

Tvj = 150 °C

3200

O'chirishni o'chirish energiya yo'qotishi

Eof

Tvj = 25 °C

3800

mJ

Tvj = 125 °C

4100

Tvj = 150 °C

4400

Qisqa uzilish oqimi

ISC

tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 1200V

10000

A