IGBT Modul 3300V

Parametr

Simvol

Shartlar

Michida

Max

BIT

Kollektor-emitter kuchlanishi

VCES

VGE=0V,Tvj≥25°C

3300

V

DC kollektor oqimi

IC

TC =80 °C

1200

A

Pik kollektor oqimi

ICM

tp =1ms,Tc=80°C

2400

A

Gate emitter kuchlanishi

VGE

-20

20

V

Jami quvvat yo'qotilishi

Ptot

TC =25°C, har bir kalit(IGBT)

10500

W

DC oldinga oqim

IF

1200

A

Pik oldinga oqim

IFRM

tp = 1 ms

2400

A

Surge oqimi

IFSM

VR = 0 V, Tvj = 125 °C,

tp = 10 ms, yarim-sinus to'lqini

9000

A

IGBT qisqa tutashuv SOA

tpsc

VCC = 2500 V, VCEM CHIP ≤ 3300V VGE ≤ 15 V, Tvj ≤ 125 °C

10

µs

Izolyatsiya kuchlanishi

Visol

1 daqiqa, f = 50 Hz

10200

V

Junction harorati

Tvj

150

°C

Kesish ishlash harorati

Tvj(op)

-50

125

°C

Korpus harorati

TC

-50

125

°C

Saqlanish harorati

TSTG

-50

125

°C

O'rnatish momentlari

M s

Asosiy issiqlik chiqaruvchi, M6 vintlar

4

6

Nm

Mt1

Asosiy terminal, M8 vintlar ,

8

10

Mt2

Yordamchi terminal, M6 vintlar

2

3

Parametr

Simvol

Shartlar

Min

Typ

Maksimal

BIT

Kollektor (- emitter) parchalanish kuchlanishi

V(BR) CES

VGE = 0 V, IC= 12 mA, Tvj = 25 °C

3300

V

Kollektor-emitter to'yingan kuchlanishi

VCE sat

C = 1200 A, VGE= 15 V

Tvj=25°C

3.1

3.4

V

Tvj=125°C

3.8

4.3

V

Kollektorni o'chirish joriy

ICES

VCE = 3300 V, VGE = 0 V

Tvj=25°C

12

mA

Tvj=125°C

120

mA

Darvoza oqimi

IGES

VCE = 0 V, VGE = ± 20 V, Tvj =125 °C

-500

500

nA

Darvozani-emitterning chegara kuchlanishi

VGE (oʻn)

IC =240mA,VCE =VGE,Tvj =25°C

5.5

7.5

V

Darvoza zaryadi

Qg

IC =1200 A VCE =1800V VGE = -15V ..15 V

12.1

µC

Kirish sig'imi

Cies

VCE = 25 V, V GE = 0 V, f = 1 MHz, Tvj = 25 °C

187

NF

Chiqarish quvvati

Koʻz

11.57

NF

Teskari o'tkazish sig'imi

Cres

2.22

NF

O'chirish kechikish vaqti

td(on)

VCC = 1800 V, IC = 1200A,

RG = 3.9Ω ,VGE =±15V

L σ = 280nH, induktiv yuk

Tvj=25°C

750

ns

Tvj=125°C

750

ns

O'sish vaqti

tr

Tvj=25°C

400

ns

Tvj=125°C

470

ns

O'chirish kechikish vaqti

td(off)

Tvj=25°C

1600

ns

Tvj=125°C

1800

ns

Pasayish vaqti

tf

Tvj=25°C

1100

ns

Tvj=125°C

1200

ns

Yoqilish -o'chirish yo'qotishlari

EON

Tvj=25°C

1400

mJ

Tvj=125°C

1800

mJ

O'chirishni o'chirish energiya yo'qotishi

Eof

Tvj=25°C

1300

mJ

Tvj=125°C

1700

mJ

Qisqa uzilish oqimi

ISC

VCC = 2500 V, VGE = 15V, L σ = 280nH, induktiv yuk

5000

A

Parametr

Simvol

Shartlar

Min

Typ

Maksimal

BIT

Oldinga Kuchlanish

VF

IF = 1200 A

Tvj = 25 °C

2.3

2.6

V

Tvj = 125 °C

2.35

2.6

V

Teskari tiklanish tok

Irr

VCC= 1800 V, IC= 1200 A,

RG=2.3Ω ,VGE=±15V, L σ = 280nH, induktiv yuk

Tvj = 25 °C

900

A

Tvj = 125 °C

1000

A

Qaytarib olinadigan to'lov

Qrr

Tvj = 25 °C

700

µC

Tvj = 125 °C

1000

µC

Teskari tiklanish vaqti

trr

Tvj = 25 °C

850

ns

Tvj = 125 °C

2200

ns

Energiya qayta tiklanishi

Erec

Tvj = 25 °C

850

mJ

Tvj = 125 °C

1300

mJ