IGBT Modul 1700V

(Simvol)

(Parametr)

(Sinov Shartlari)

(qiymat)

(Birlik)

VCES

Kollektor-emitter kuchlanishi

V GE = 0V, TC= 25。C

1700

V

V GES

Chiqargichning kuchlanishi

TC= 25。C

± 20

V

I C

Kollektor-emitter oqimi

TC = 80。C

800

A

I C(PK)

Pik kollektor oqimi

t P=1ms

1600

A

P max

Maks. transistor quvvat yo'qotilishi

Tvj = 150。C, TC = 25。C

6.94

кВт

I 2t

Diod I 2t

VR =0V, t P = 10ms, Tvj = 125。C

120

kA2s

Visol

Izolyatsiya kuchlanishi – modulga qarab

( Asosiy plitkaga umumiy terminallar),

AC RMS,1 min, 50Hz,TC= 25。C

4000

V

Q PD

Qismiy discharge – modul uchun

IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS, TC= 25。C

10

PC

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maksimal)

(BIT)

I CES

Kollektorni to'xtatish joriy

V GE = 0V,VCE = VCES

1

mA

V GE = 0V, VCE = VCES, TC = 125 ° C

25

mA

I GES

Darvoza oqimi

V GE = ±20V, VCE = 0V

4

μA

V GE (TH)

Darvoza threshold kuchlanishi

I C = 40mA, V GE = VCE

5.00

5.70

6.50

V

VCE (sat)

Kollektsioner-Emitter To'yingan Kuchlanishi

V GE = 15V, I C = 800A

2.30

2.60

V

V GE = 15V, I C = 800A,Tvj = 125 °C

2.80

3.10

V

I F

Diodning oldinga oqimi

DCDC

800

A

I FRM

Diodning maksimal oldingi oqimi

t P = 1ms

1600

A

VF(*1)

Diodning oldinga kuchlanishi

I F = 800A

1.70

2.00

V

I F = 800A, Tvj = 125 °C

1.80

2.10

V

C ies

Kirish sig'imi

VCE = 25V, V GE = 0V, f = 1MHz

60

NF

Q g

Darvoza zaryadi

±15V

9

μC

C res

Teskari o'tkazish sig'imi

VCE = 25V, V GE = 0V, f = 1MHz

-

NF

L M

Modulning induktansiyasi

20

nH

R INT

Ichki tranzistor qarshiligi

270

μΩ

I SC

Qisqa tutashuv oqimi, ISC

Tvj = 125°C, VCC = 1000V,

V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2)×di/dt,

IEC 6074-9

3700

A

td(off)

O'chirish kechikish vaqti

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

890

ns

t f

Pasayish vaqti

220

ns

E OFF

O'chirish energiya yo'qotilishi

220

mJ

td(on)

O'chirish kechikish vaqti

320

ns

t r

O'sish vaqti

190

ns

EON

O'chirish energiya yo'qotilishi

160

mJ

Q rr

Diodning teskari tiklanish zaryadi

I F = 800A

VCE = 900V

diF/dt =4000A/us

260

μC

I rr

Diodning teskari tiklanish joriy

510

A

E rec

Diodning teskari tiklanish energiyasi

180

mJ

td(off)

O'chirish kechikish vaqti

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

980

ns

t f

Pasayish vaqti

280

ns

E OFF

O'chirish energiya yo'qotilishi

290

mJ

td(on)

O'chirish kechikish vaqti

400

ns

t r

O'sish vaqti

250

ns

EON

O'chirish energiya yo'qotilishi

230

mJ

Q rr

Diodning teskari tiklanish zaryadi

I F = 800A

VCE = 900V

diF/dt =4000A/us

420

μC

I rr

Diodning teskari tiklanish joriy

580

A

E rec

Diodning teskari tiklanish energiyasi

280

mJ