IGBT Modul 3300V

(Simvol)

(Parametr)

(Sinov Shartlari)

(qiymat)

(Birlik)

VCES

Kollektor-emitter kuchlanishi

V GE = 0V,Tvj = 25°C

3300

V

V GES

Chiqargichning kuchlanishi

± 20

V

I C

Kollektor-emitter oqimi

T holat = 100 °C, Tvj = 150 °C

500

A

I C(PK)

Pik kollektor oqimi

1ms, T case = 140 °C

1000

A

P max

Maks. transistor quvvat yo'qotilishi

Tvj = 150°C, T holat = 25 °C

5.2

кВт

I 2t

Diod I t

VR =0V, t P = 10ms, Tvj = 150 °C

80

kA2s

Visol

Izolyatsiya kuchlanishi – modulga qarab

Umumiy terminal bazasi plitkasi bilan bog'langan),

AC RMS,1 min, 50Hz

6000

V

Q PD

Qismiy discharge – modul uchun

IEC1287. V 1 = 3500V, V2 = 2600V, 50Hz RMS, TC = 25 °C

10

PC

TVazifa = 25 °C T Vazifa = 25°C agar ko'rsatilmagan boshqa

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maksimal)

(BIT)

Ман CES

Kollektorni to'xtatish joriy

V GE = 0V, VCE = VCES

1

mA

V GE = 0V, VCE = VCES , T Vazifa =125 °C

30

mA

V GE = 0V, VCE =VCES , T Vazifa =150 °C

50

mA

Ман GES

Darvoza oqimi Jorov

V GE = ±20V, VCE = 0V

1

μA

V GE (TH)

Darvoza threshold kuchlanishi

Ман C = 40mA, V GE =VCE

5.50

6.10

7.00

V

VCE (sat)(*1)

Kollektor-emitter to'yinganligi kuchlanuvchi kuchlanuvchi kuch

V GE =15V,Ман C= 500A

2.40

2.90

V

V GE =15V,Ман C = 500A,Tvj = 125 °C

2.95

3.40

V

V GE =15V,Ман C = 500A,Tvj = 150 °C

3.10

3.60

V

Ман F

Diodning oldinga oqimi

DC

500

A

Ман FRM

Diodning maksimal oldinga Jorov

T P = 1ms

1000

A

VF(*1)

Diodning oldinga kuchlanishi

Ман F = 500A

2.10

2.60

V

Ман F = 500A, Tvj = 125 °C

2.25

2.70

V

Ман F = 500A, Tvj = 150 °C

2.25

2.70

V

Cies

Kirish sig'imi

VCE = 25V, V GE = 0V,F = 1MHz

90

NF

Qg

Darvoza zaryadi

±15V

9

μC

Cres

Teskari uzatish capacitance

VCE = 25V, V GE = 0V,F = 1MHz

2

NF

L M

Modul Induktivlik

25

nH

R INT

Ichki tranzistor qarshiligi

310

μΩ

Ман SC

Qisqa tutashuv joriy, МанSC

Tvj = 150°C, V CC = 2500V, V GE ≤15V,TP ≤10μs,

VCE(Maksimal) = VCES –L (*2) ×di/dt,IEC 6074-9

1800

A

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH

V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1720

ns

t f

Pasayish vaqti

520

ns

E OFF

O'chirish energiya yo'qotilishi

780

mJ

td(on)

O'chirish kechikish vaqti

650

ns

tr

O'sish vaqti

260

ns

EON

O'chirish energiya yo'qotilishi

730

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

390

μC

I rr

Diodning teskari tiklanish joriy

420

A

Erec

Diodning teskari tiklanish energiyasi

480

mJ

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maks)

(Birlik)

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1860

ns

t f

Pasayish vaqti

550

ns

E OFF

O'chirish energiya yo'qotilishi

900

mJ

td(on)

O'chirish kechikish vaqti

630

ns

tr

Ko'tarilish vaqtiO'sish vaqti

280

ns

EON

O'chirish energiya yo'qotilishi

880

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

620

μC

I rr

Diodning teskari tiklanish joriy

460

A

Erec

Diodning teskari tiklanish energiyasi

760

mJ

(Simvol)

(Parametr)

(Sinov Shartlari)

(Min)

(Typ)

(Maks)

(Birlik)

td(off)

O'chirish kechikish vaqti

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1920

ns

t f

Pasayish vaqti

560

ns

E OFF

O'chirish energiya yo'qotilishi

1020

mJ

td(on)

O'chirish kechikish vaqti

620

ns

tr

O'sish vaqti

280

ns

EON

O'chirish energiya yo'qotilishi

930

mJ

Qrr

Diodning teskari tiklanish zaryadi

I F =500A

VCE =1800V

diF/dt =2100A/us

720

μC

I rr

Diodning teskari tiklanish joriy

490

A

Erec

Diodning teskari tiklanish energiyasi

900

mJ