TG1400HF17H1-S300,IGBT Modul, Yarim Ko'prik IGBT,CRRC

IGBT Modul 1700V

TG1400HF17H1-S300,IGBT Modul,Half Bridge IGBT,CRRC

TG1400HF17H1-S300,IGBT Modul,Half Bridge IGBT,CRRC

1400A 1700V

Brand:

CRRC

Spu:

TG1400HF17H1-S300

Kirish
Koʻrinish

Kirish

Qisqacha kirish soʻzlari

IGBT moduli ,Yarmi Ko'prik IGBT, CRRC tomonidan ishlab chiqarilgan. 1700V 1400A.

Kalit Parametrlar

V CES	1700 V
V Oʻzbekiston Respublikasi Tip.	2.0 V
*Ман* C Max.	1400 A
*Ман* C(RM) Max.	2800 A

Oddiy qoʻllanmalar

Motor Drives
Yuqori Quvvat Aylantiruvchilari
Shamol Turbinlari

Xususiyatlar

Cu asosli plastinka

Al2O3substratlar
Yuqori Termal Tsikllash Qobiliyati
10μs Qisqa Aylanishga Bardosh

Mutlaq maksimal reytinglar

Simvol	Parametr	Sinov sharoitlari	qiymat	BIT
VCES	Kollektor-emitter kuchlanishi	VGE = 0V, TC = 25 °C	1700	V
VGES	Chiqargichning kuchlanishi	TC= 25 °C	± 20	V
IC	Kollektor-emitter oqimi	TC = 65 °C	1400	A
IC(PK)	集电极峰值 elektr oqimi Pik kollektor oqimi	tp=1ms	2800	A
Pmax	Maks. transistor quvvat yo'qotilishi	Tvj = 150 °C, TC = 25 °C	6.25	кВт
I2t	Diod I2t	VR = 0V, tP = 10 ms, Tvj = 150 °C	145	kA2s
Visol	Izolatsiya kuchlanmasi - modul bo'yicha	Asosiy plita uchun umumiy terminallar), AC RMS,1 min, 50 Hz, TC= 25 °C	4000	V

Elektr xususiyatlari

Simvol	Parametr	Sinov sharoitlari			Min.	Tip.	Max.	BIT
ICES	Kollektorni to'xtatish joriy	VGE = 0V, VCE = VCES					1	mA
		VGE = 0V, VCE = VCES, TC=125 °C					20	mA
		VGE = 0V, VCE = VCES, TC=150 °C					30	mA
IGES	Darvoza oqimi	VGE = ±20V, VCE = 0V					0.5	μA
VGE (TH)	Darvoza threshold kuchlanishi	IC = 30mA, VGE = VCE			5.00	6.00	7.00	V
VCE (sat)	Kollektor-emitter to'yinganligi kuchlanuvchi kuchlanuvchi kuch	VGE = 15V, IC = 1400A				2.00	2.40	V
		VGE = 15V, IC = 1400A, Tvj = 125 °C				2.45	2.70	V
		VGE = 15V, IC = 1400A, Tvj = 150 °C				2.55	2.80	V
IF	Diodning oldinga oqimi	DC				1400		A
IFRM	Diodning yuqori oqimi oldinga	tP = 1 ms				2800		A
VF(*1)	Diodning oldinga kuchlanishi	IF = 1400A, VGE = 0				1.80	2.20	V
		IF = 1400A, VGE = 0, Tvj = 125 °C				1.95	2.30	V
		IF = 1400A, VGE = 0, Tvj = 150 °C				2.00	2.40	V
ISC	Qisqa uzilish oqimi	Tvj = 150°C, VCC = 1000V, VGE ≤15V, tp ≤10μs, VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9				5400		A
Cies	kirish quvvati Kirish sig'imi		VCE = 25V, VGE = 0V, f = 100kHz			113		NF
Qg	Darvoza zaryadi		±15V			11.7		μC
Cres	Teskari o'tkazish sig'imi		VCE = 25V, VGE = 0V, f = 100kHz			3.1		NF
LM	Modulning induktansiyasi					10		nH
RINT	Ichki tranzistor qarshiligi					0.2		mΩ
td(off)	O'chirish kechikish vaqti		IC = 1400A, VCE = 900V, VGE = ±15V, RG ((OFF) = 1,8Ω, LS = 20nH, dv/dt = 3000V/us (Tvj = 150 °C).	Tvj= 25 °C		1520		ns
				Tvj= 125 °C		1580
				Tvj= 150 °C		1600
tf	tushish vaqti Pasayish vaqti			Tvj= 25 °C		460		ns
				Tvj= 125 °C		610
				Tvj= 150 °C		650
Eof	O'chirish energiya yo'qotilishi			Tvj= 25 °C		460		mJ
				Tvj= 125 °C		540
				Tvj= 150 °C		560
td(on)	O'chirish kechikish vaqti		IC = 1400A, VCE = 900V, VGE = ±15V, RG ((ON) = 1,2Ω, LS = 20nH, di/dt = 10000A/us (Tvj= 150 °C).	Tvj= 25 °C		400		ns
				Tvj= 125 °C		370
				Tvj= 150 °C		360
tr	O'sish vaqti			Tvj= 25 °C		112		ns
				Tvj= 125 °C		120
				Tvj= 150 °C		128
EON	O'chirish energiya yo'qotilishi			Tvj= 25 °C		480		mJ
				Tvj= 125 °C		580
				Tvj= 150 °C		630
Qrr	Diod orqaga Qaytarib olish haqi		IF = 1400A, VCE = 900V, - diF/dt = 10000A/us (Tvj= 150 °C).	Tvj= 25 °C		315		μC
				Tvj= 125 °C		440
				Tvj= 150 °C		495
Irr	Diod orqaga Qayta tiklash oqimi			Tvj= 25 °C		790		A
				Tvj= 125 °C		840
				Tvj= 150 °C		870
Erec	Diod orqaga energiyani tiklash			Tvj= 25 °C		190		mJ
				Tvj= 125 °C		270
				Tvj= 150 °C		290