Qisqacha kirish soʻzlari
Tiristor Diod moduli , MTx 820 MFx 820 MT 800，820A ,Havo sovutish ，tECHSEM tomonidan ishlab chiqarilgan.
VRRM ,VDRM |
TUR & Kontur |
|
600V |
MTC820-06-416F3 |
MFC820-06-416F3 |
800V |
MTC820-08-416F3 |
MFC820-08-416F3 |
1000V |
MTC820-10-415F3 |
MFC820-10-416F3 |
1200V |
MTC820-12-416F3 |
MFC820-12-416F3 |
1400V |
MTC820-14-416F3 |
MFC820-14-416F3 |
1600V |
MTC820-16-416F3 |
MFC820-16-416F3 |
1800V |
MTC820-18-416F3 |
MFC820-18-416F3 |
1800V |
MT820-18-416F3G |
|
Xususiyatlari
Oddiy qoʻllanmalar
|
Simvol |
XUShMATLAR |
Sinov sharoitlari |
Tj(℃) |
Qiymat |
Бирлик |
||
Min |
TUR |
Maksimal |
|||||
IT(AV) |
O'rtacha yoqilgan holatdagi tok |
180° yuqori sinuzoida 50Hz, bitta tomonidan sochilgan, Tc=85℃ |
135 |
|
|
820 |
A |
IT ((RMS) |
RMS ish holatidagi tok |
180。yarim sinus to'lqini 50Hz |
|
|
1287 |
A |
|
Idrm Irrm |
Takroriy cho'qqi oqim |
vDRM va VRRM da |
135 |
|
|
120 |
mA |
ITSM |
To'lqin yoqilgan holatdagi tok |
10 ms yarim sinus to'lqini, VR = 0V |
135 |
|
|
20.1 |
kA |
Ман 2t |
Qayta birikish uchun I2t |
|
|
2020 |
A 2s* 10 3 |
||
VTO |
Chiziqli kuchlanishni |
|
135 |
|
|
0.81 |
V |
rt |
Yoqilgan holatdagi qiyshiq qarshilik |
|
|
0.24 |
mΩ |
||
VTM |
Eng yuqori yoqilgan holatdagi kuchlanish |
ITM = 1500A |
25 |
|
|
1.38 |
V |
dv/dt |
O'chirilgan holat voltajining tanqidiy ko'tarilish tezligi |
VDM=67%VDRM |
135 |
|
|
1000 |
V/μs |
di/dt |
O'rnatilgan holatdagi oqimning o'sishining kritik darajasi |
Gate manbai 1.5A tr ≤0.5μs Takroriy |
135 |
|
|
200 |
A/μs |
tgd |
Darvoza bilan boshqariladigan kechikish vaqti |
IG= 1A dig/dt=1A/μs |
25 |
|
|
4 |
μs |
tq |
O'zaro o'zgartirilgan o'chirish vaqti |
ITM=800A, tp=2000μs, VR =50V dv/dt=20V/μs,di/dt=-10A/μs |
135 |
|
250 |
|
µs |
IGT |
Eshikni ishga tushirish tok |
VA= 12V, IA= 1A |
25 |
30 |
|
250 |
mA |
Vgt |
Eshikni ishga tushirish kuchlanishi |
0.8 |
|
3.0 |
V |
||
IH |
Ushlab turish toki |
10 |
|
300 |
mA |
||
IL |
Qayta ushlab turish toki |
IA=1A IG=1A dig/dt=1A/μs tg=30us |
25 |
|
|
1500 |
mA |
VGD |
Ishga tushirilmagan eshik kuchlanishi |
VDM=67%VDRM |
135 |
|
|
0.25 |
V |
IGD |
O'chirilmaydigan darvoza oqimi |
VDM=67%VDRM |
135 |
|
|
5 |
mA |
Rth(j-c) |
Termal qarshilik kesishdan qutiga |
Har bir chip uchun bir tomonlama sovutilgan |
|
|
|
0.047 |
°C/W |
Rth(c-h) |
Qizil qarshilik quti va issiqlik chiqaruvchi o'rtasida |
Har bir chip uchun bir tomonlama sovutilgan |
|
|
|
0.015 |
°C/W |
VISO |
Izolyatsiya kuchlanishi |
50Hz,R.M.S,t= 1min,Iiso:1mA(MAX) |
|
3000 |
|
|
V |
|
Fm |
Terminal ulanish momenti (M10) |
|
|
10.0 |
|
12.0 |
N·m |
O'rnatish momenti (M6) |
|
|
4.5 |
|
6.0 |
N·m |
|
Tvj |
Junction harorati |
|
|
-40 |
|
135 |
℃ |
TSTG |
Saqlash harorati |
|
|
-40 |
|
125 |
℃ |
Wt |
Og'irlik |
|
|
|
1410 |
|
g |
Koʻrinish |
416F3 |
||||||
UZ
