IGBT Modul 6500V

V_CES

6500 V

V_{Oʻzbekiston Respublikasi}Tip.

3.0 V

Ман_CMax.

750 A

Ман_C(RM)Max.

1500 A

Simvol

Parametr

Sinov sharoitlari

qiymat

BIT

V_CES

Kollektor-emitter kuchlanishi

VGE = 0V, TC = 25 °C

6500

V

V_GES

Chiqargichning kuchlanishi

TC= 25 °C

± 20

V

Ман_C

Kollektor-emitter oqimi

TC = 80 °C

750

A

Ман_C(PK)

Pik kollektor oqimi

tp=1ms

1500

A

P_Maksimal

Maks. transistor quvvat yo'qotilishi

Tvj = 150 °C, TC = 25 °C

11.7

кВт

Ман²T

Diod I2t

VR = 0V, tP = 10 ms, Tvj = 150 °C

460

kA2s

V_isol

Izolatsiya kuchlanmasi - modul bo'yicha

(Asos plitasiga umumiy terminalar), AC RMS, 1 daqiqa, 50Hz, TC= 25 °C

10.2

кВ

Q_PD

Qisman discharge - modul boshiga

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

PC

Rth(J-C) IGBT

Termal qarshilik - IGBT

8.5

K / kW

Rth(J-C) Diod

Termal qarshilik - Diod

19.0

K / kW

Rth(C-H) IGBT

Termal qarshilik -

korpusdan issiqlik chiqaruvchiga (IGBT)

O'rnatish momenti 5Nm,

o'rnatish moyi bilan 1W/m·°C

9

K / kW

Rth(C-H) Diod

Termal qarshilik -

korpusdan issiqlik chiqaruvchiga (Diod)

O'rnatish momenti 5Nm,

o'rnatish moyi bilan 1W/m·°C

18

K / kW

Tvjop

Ishlanish boʻgʻinlari harorati

( IGBT )

-40

125

°C

( Diod )

-40

125

°C

TSTG

Saqlash harorati

Saqlanish harorat oraliqi

-40

125

°C

M

Vint momenti

O'rnatish – M6

5

Nm

Elektr ulanishlari – M4

2

Nm

Elektr ulanishlari – M8

10

Nm

符号Simvol

参数名称Parametr

shartlar

Sinov sharoitlari

minimal qiymatMin.

tipik qiymatTip.

maksimal qiymatMax.

单位BIT

ICES

to'plam to'xtash oqimi

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

90

mA

IGES

qaytish oqimining oqimi

Darvoza oqimi

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Qatlam-Emissiya qutisi chegarasi kuchlanishiDarvoza threshold kuchlanishi

IC = 120mA, VGE = VCE

5.00

6.00

7.00

V

VCE (sat)

集电极-Emissiya qutisi to'yingan kuchlanishi

Kollektor-emitter to'yinganligi

kuchlanuvchi kuchlanuvchi kuch

VGE =15V, IC = 750A

3.0

3.4

V

VGE =15V, IC = 750A, Tvj = 125 °C

3.9

4.3

V

IF

Diodning to'g'ri oqim kuchiDiodning oldinga oqimi

DC

750

A

IFRM

Diode ning to'g'ri yo'nalishdagi takroriy pik oqimiDiodning yuqori oqimi oldinga

tP = 1 ms

1500

A

VF(*1)

Diode ning to'g'ri yo'nalishdagi kuchlanishi

Diodning oldinga kuchlanishi

IF = 750A, VGE = 0

2.55

2.90

V

IF = 750A, VGE = 0, Tvj = 125 °C

2.90

3.30

V

ISC

Qisqa tutashuv oqimi

Qisqa uzilish oqimi

Tvj = 125°C, VCC = 4500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

2800

A

Cies

kirish quvvati

Kirish sig'imi

VCE = 25V, VGE = 0V, f = 100kHz

123

NF

Qg

qaytish zaryadi

Darvoza zaryadi

±15V

9.4

μC

Cres

teskari uzatish kondensatori

Teskari o'tkazish sig'imi

VCE = 25V, VGE = 0V, f = 100kHz

2.6

NF

LM

Modul induktivligi

Modulning induktansiyasi

10

nH

RINT

Ichki qarshilik

Ichki tranzistor qarshiligi

90

mΩ

td_(o'chirish)

O'chirish kechikishi

O'chirish kechikish vaqti

IC =750A,

VCE = 3600V, VGE = ±15V, RG(OFF) = 6.8Ω, CGE = 330nF, LS = 280nH,

Tvj= 25 °C

3060

ns

Tvj= 125 °C

3090

T_F

tushish vaqtiPasayish vaqti

Tvj= 25 °C

2390

ns

mJ

ns

ns

mJ

μC

Tvj= 125 °C

2980

E_o'chirilgan

关断损耗

O'chirish energiya yo'qotilishi

Tvj= 25 °C

3700

Tvj= 125 °C

4100

td_(yoqish)

开通延迟时间

O'chirish kechikish vaqti

IC =750A,

VCE = 3600V, VGE = ±15V, RG(ON) = 1.0Ω, CGE = 330nF, LS = 280nH,

Tvj= 25 °C

670

Tvj= 125 °C

660

tr

Ko'tarilish vaqtiO'sish vaqti

Tvj= 25 °C

330

Tvj= 125 °C

340

E_{включено}

Ochiq yo'l yo'qotish

O'chirish energiya yo'qotilishi

Tvj= 25 °C

4400

Tvj= 125 °C

6100

Qrr

Diode ning teskari tiklanish zaryadiDiod orqaga

Qaytarib olish haqi

IF =750A,

VCE = 3600V,

- diF/dt = 3000A/us, (Tvj= 125 °C).

Tvj= 25 °C

1300

Tvj= 125 °C

1680

Irr

Diode ning teskari tiklanish oqimiDiod orqaga

Qayta tiklash oqimi

Tvj= 25 °C

1310

A

mJ

Tvj= 125 °C

1460

Erec

Diode ning teskari tiklanish yo'qotishDiod orqaga

energiyani tiklash

Tvj= 25 °C

2900

Tvj= 125 °C

4080