YMIF1200-45, IGBT Moduli, Bitta Vichuga IGBT, CRRC

VCES

4500

V

VCE(sat)

(Typ)

2.30

V

IC

(Maks)

1200

A

ICRM)

(Maks)

2400

A

符号
(Simvol)

参数名称
(Parametr)

测试条件
(Sinov Shartlari)

数值
(qiymat)

bir o'lchov
(Birlik)

VCES

集电极 -emissiya kuchlanishi
Kollektor-emitter kuchlanishi

VGE=OV, Tvj=25℃

4500

V

VGES

qatlam -emissiya kuchlanishi
Chiqargichning kuchlanishi

±20

V

IC

to'plam oqimi
Kollektor-emitter kuchlanishi

Tvj=125℃, Tcase=85℃

1200

A

IC(PK)

集电极峰值 elektr oqimi
Pik kollektor oqimi

1ms

2400

A

Pmax

transistorning maksimal yo'qotilishi

Maks. transistor quvvat yo'qotilishi

Tvj=125℃, Tcase=25℃

12.5

kw

I²t

二极管 ²t qiymat
Diod I2t

VR=0V, tp=10ms, Tvj=125℃

530

kA²s

Visol

绝缘电压 (modul )

Izolyatsiya kuchlanishi - modul boshiga

barcha terminalarni qisqa tuting, terminal va asosiy plita o'rtasida voltaj qo'llang
(Asosiy plitaga umumiy terminallar),
AC RMS, 1 daqiqa, 50Hz

10200

V

QPD

mahalliy chiqish zaryadi (modul )
Qisman chiqish - modul boshiga

IEC1287.V1=6900V,V2=5100V,50Hz RMS

10

pC

爬电距离

Yuzaga chiqish masofasi

56mm

izolyatsiya masofasi

Bo'shliq

26mm

o'tkazuvchanlikka chidamlilik indeksi

CTI (Kritik Izlash Indeksi)

>600

Termal va Mexanik Ma'lumotlar

符号
(Simvol)

参数名称
(Parametr)

测试条件
(Sinov Shartlari)

eng kichik
(Min)

maksimal
(Maks)

bir o'lchov
(Birlik)

Rh(J-C)IGBT

GBT 结热阻

Termal qarshilik - IGBT

keshning doimiy quvvat yo'qotilishi
Doimiy yo'qotish - bog'lanishdan qutichaga

8

K/kW

Rh(J-C)Diod

diodning bog'lanishdan qutichaga termal qarshiligi
Termal qarshilik - diod

keshning doimiy quvvat yo'qotilishi
Doimiy yo'qotish - bog'lanishdan qutichaga

16

K/kW

Rt(C-H)

接触热阻 (modul )
Issiqlik kuchlanishiga qarshilik
qutichadan issiqlik chiqaruvchiga (modul boshiga)

o'rnatish momenti 5Nm( o'tkazuvchi yog' 1W/m · ℃)
O'rnatish momenti 5Nm
(o'rnatish yog'i bilan 1W/m · ℃)

6

K/kW

Televizor

bog'lanish harorati Junction harorati

IGBT qism (IGBT)

125

℃

diode qismi (Diode)

125

℃

TSTG

saqlash harorati Saqlash temperaturasi diapazoni

-40

125

℃

M

o'rnatish momenti Vint momenti

o'rnatish uchun mahkamlash -M6 O'rnatish -M6

5

Nm

elektr tarmog'ini ulash uchun -M4
Elektr ulanishlari -M4

2

Nm

elektr tarmog'ini ulash uchun -M8
Elektr ulanishlari -M8

10

Nm

Tcase=25℃ aks holda ko'rsatilmagan bo'lsa

符号
(Simvol)

参数名称
(Parametr)

shartlar
(Sinov Shartlari)

eng 小
(Min)

典型
(Typ)

eng 大
(Maks)

单位
(Birlik)

ICES

to'plam to'xtash oqimi
Kollektorni to'xtatish joriy

VGE=OV,VcE=VCES

1

mA

VGE=OV,VcE=VCEs,Tcase=125°C

90

mA

IGES

qaytish oqimining oqimi
Darvoza oqimi

VGE=±20V,VcE=0V

1

μA

VGE (oʻn)

qatlam -emissiya qutisi chegarasi kuchlanishi
Darvoza threshold kuchlanishi

Ic=120mA,VGE=VCE

5.0

6.0

7.0

V

VCE(sa)

集电极 -emissiya qutisi to'yingan kuchlanishi
Kollektor-emitter to'yinganligi
voltaj

VGE=15V,Ic=1200A

2.3

2.8

V

VGE=15V,Ic=1200A,Tvj=125°C

3.0

3.5

V

IF

diodning to'g'ri oqim kuchi
Diodning oldinga oqimi

DC

1200

A

IFRM

diode ning to'g'ri yo'nalishdagi takroriy pik oqimi
Diodning maksimal oldingi oqimi

tp=1ms

2400

A

vF(1

diode ning to'g'ri yo'nalishdagi kuchlanishi
Diodning oldinga kuchlanishi

/F=1200A

2.4

2.9

V

/F=1200A,Tvj=125°C

2.7

3.2

V

Cies

kirish quvvati
Kirish sig'imi

VcE=25V,VGE=OV,f=1MHz

135

nF

Q₉

qaytish zaryadi
Darvoza zaryadi

±15V

11.9

μC

Cres

teskari uzatish kondensatori
Teskari o'tkazish sig'imi

VcE=25V,VGE=0V,f =1MHz

3.4

nF

LM

modul induktivligi
Modulning induktansiyasi

10

nH

RINT

ichki qarshilik
Ichki tranzistor qarshiligi

90

μΩ

ISC

qisqa tutashuv oqimi
Qisqa tutashuv oqimi,Isc

Tvj=125°C,Vcc=3400V,
VGE≤15V,tp≤10μs,
VCE(max)=VCEs-L(2×di/dt,

IEC 60747-9

5300

A

td(of)

o'chirish kechikishi
O'chirish kechikish vaqti

Ic=1200A
VcE=2800V
Cge=220nF

L ～ 180nH
VGE=± 15V
RG(ON)=1.5Ω
RG(OFF)=2.7Ω

2700

ns

tf

tushish vaqti
Pasayish vaqti

700

ns

Eof

关断损耗
O'chirish energiya yo'qotilishi

5800

mJ

tdon)

开通延迟时间
O'chirish kechikish vaqti

720

ns

t

ko'tarilish vaqti
O'sish vaqti

270

ns

EON

ochiq yo'l yo'qotish
O'chirish energiya yo'qotilishi

3200

mJ

Qm

diode ning teskari tiklanish zaryadi
Diodning teskari tiklanish zaryadi

/F=1200A
VcE = 2800V
dip/dt =5000A/us

1200

μC

Ман

diode ning teskari tiklanish oqimi
Diodning teskari tiklanish joriy

1350

A

Erec

diode ning teskari tiklanish yo'qotish
Diodning teskari tiklanish energiyasi

1750

mJ

td(of)

o'chirish kechikishi
O'chirish kechikish vaqti

Ic=1200A
VcE = 2800V
Cge=220nF
L ～ 180nH
VGE=± 15V
RG(ON)=1.5Ω
RGOFF)=2.7Ω

2650

ns

tf

tushish vaqti
Pasayish vaqti

720

ns

Eof

关断损耗
O'chirish energiya yo'qotilishi

6250

mJ

tdon)

开通延迟时间
O'chirish kechikish vaqti

740

ns

t

ko'tarilish vaqti
O'sish vaqti

290

ns

EON

ochiq yo'l yo'qotish
O'chirish energiya yo'qotilishi

4560

mJ

Q

diode ning teskari tiklanish zaryadi
Diodning teskari tiklanish zaryadi

/F=1200A
VcE=2800V
dip/dt =5000A/us

1980

μC

Ман

diode ning teskari tiklanish oqimi
Diodning teskari tiklanish joriy

1720

A

Erec

diode ning teskari tiklanish yo'qotish
Diodning teskari tiklanish energiyasi

3250

mJ