YMIF1000-33,IGBT moduli,Bitta kalit IGBT,CRRC

IGBT Modul，3300V 1000A

Brand:

CRRC

Spu:

YMIF1000-33

Qisqacha kirish soʻzlari

CRRC tomonidan ishlab chiqarilgan yuqori voltli, yagona kalitli IGBT modullari. 3300V 1000A.

Kalit Parametrlar

Oddiy qoʻllanmalar

Oddiy qoʻllanmalar

Absolyut Maksimal Reyting

(Simvol)	(Parametr)	(Sinov Shartlari)	(qiymat)	(Birlik)
VCES	Kollektor-emitter kuchlanishi	VGE = 0V, TC = 25 °C	3300	V
VGES	Chiqargichning kuchlanishi	TC= 25 °C	± 20	V
I C	Kollektor-emitter oqimi	TC = 95 °C	1000	A
IC(PK)	Pik kollektor oqimi	t P= 1ms	2000	A
P max	Maks. transistor quvvat yo'qotilishi	Tvj = 150 °C, TC = 25 °C	10.4	kw
I 2t	Diod I2t	VR =0V, t P = 10ms, Tvj = 150 °C	320	kA2s
Visol	Izolyatsiya kuchlanishi – modulga qarab	Umumiy terminal bazasi plitkasi bilan bog'langan), AC RMS,1 min, 50Hz,TC= 25 °C	6000	V
Q PD	Qismiy discharge – modul uchun	IEC1287. V 1 = 3500V, V 2 = 2600V, 50Hz RMS, TC= 25 °C	10	pC

Elektr xususiyatlari

(Simvol)		(Parametr)	(Sinov Shartlari)	(Min)	(Typ)	(Maks)	(Birlik)
I CES		Kollektorni to'xtatish joriy	VGE = 0V, VCE = VCES			1	mA
			VGE = 0V, VCE = VCES, TC = 125 ° C			60	mA
			VGE = 0V, VCE = VCES, TC = 150 ° C			100	mA
I GES		Darvoza oqimi	VGE = ±20V, VCE = 0V			1	μA
VGE (TH)		Darvoza threshold kuchlanishi	I C= 80mA, VGE= VCE	5.50	6.10	7.00	V
VCE	(*1) (oʻtirgan)	Kollektor-emitter to'yinganligi voltaj	VGE= 15V, I C= 1000A		2.40	2.90	V
			VGE= 15V, I C= 1000A,Tvj = 125 ° C		2.95	3.40	V
			VGE= 15V, I C= 1000A,Tvj = 150 ° C		3.10	3.60	V
I F		Diodning oldinga oqimi	DC		1000		A
I FRM		Diodning maksimal oldingi oqimi	t P = 1ms		2000		A
VF(*1)		Diodning oldinga kuchlanishi	I F= 1000A		2.10	2.60	V
			I F= 1000A, Tvj= 125 ° C		2.25	2.70	V
			I F= 1000A, Tvj= 150 ° C		2.25	2.70	V
C ies		Kirish sig'imi	VCE= 25V, VGE= 0V, f = 1MHz		170		nF
Q g		Darvoza zaryadi	±15V		17		μC
C res		Teskari o'tkazish sig'imi	VCE= 25V, VGE= 0V, f = 1MHz		4		nF
L M		Modulning induktansiyasi			15		nH
R INT		Ichki tranzistor qarshiligi			165		μΩ
I SC		Qisqa tutashuv oqimi, ISC	Tvj = 150°C, VCC = 2500V, VGE≤15V, tp≤10μs, VCE(max) = VCES – L (*2)×di/dt, IEC 6074-9		3900		A

td(off)	O'chirish kechikish vaqti	I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω	1800	ns
t f	Pasayish vaqti		530	ns
E OFF	O'chirish energiya yo'qotilishi		1600	mJ
td(on)	O'chirish kechikish vaqti		680	ns
t r	O'sish vaqti		320	ns
EON	O'chirish energiya yo'qotilishi		1240	mJ
Q rr	Diodning teskari tiklanish zaryadi	I F =1000A VCE =1800V diF/dt =3300A/us	780	μC
I rr	Diodning teskari tiklanish joriy		810	A
E rec	Diodning teskari tiklanish energiyasi		980	mJ
td(off)	O'chirish kechikish vaqti	I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω	1940	ns
t f	Pasayish vaqti		580	ns
E OFF	O'chirish energiya yo'qotilishi		1950	mJ
td(on)	O'chirish kechikish vaqti		660	ns
t r	O'sish vaqti		340	ns
EON	O'chirish energiya yo'qotilishi		1600	mJ
Q rr	Diodning teskari tiklanish zaryadi	I F =1000A VCE =1800V diF/dt =3300A/us	1200	μC
I rr	Diodning teskari tiklanish joriy	I F =1000A VCE =1800V diF/dt =3300A/us	930	A