IGBT Modul 3300V

Simvol

Parametr

Sinov sharoitlari

qiymat

BIT

VCES

Kollektor-emitter kuchlanishi

VGE = 0V, TC = 25 °C

3300

V

VGES

Chiqargichning kuchlanishi

TC= 25 °C

± 20

V

IC

Kollektor-emitter oqimi

TC = 100 °C

250

A

IC(PK)

Pik kollektor oqimi

tp=1ms

500

A

Pmax

Maks. transistor quvvat yo'qotilishi

Tvj = 150 °C, TC = 25 °C

2.6

кВт

I2t

Diod I2t

VR = 0V, tP = 10 ms, Tvj = 150 °C

20

kA2s

Visol

Izolatsiya kuchlanmasi - modul bo'yicha

( Umumiy terminalni asosiy plitaga), AC RMS,1 daqiqa, 50Hz, TC= 25 °C

6

кВ

QPD

Qisman discharge - modul boshiga

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

PC

Simvol

Parametr

Sinov sharoitlari

Min.

Tip.

Max.

BIT

ICES

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Darvoza oqimi

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Darvoza threshold kuchlanishi

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)

Kollektor-emitter to'yinganligi kuchlanuvchi kuchlanuvchi kuch

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diodning oldinga oqimi

DC

250

A

IFRM

Diodning yuqori oqimi oldinga

tP = 1 ms

500

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Qisqa uzilish oqimi

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

ICES

Kollektorni to'xtatish joriy

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Darvoza oqimi

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Darvoza threshold kuchlanishi

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)

Kollektor-emitter to'yinganligi

kuchlanuvchi kuchlanuvchi kuch

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diodning oldinga oqimi

DC

250

A

IFRM

Diodning yuqori oqimi oldinga

tP = 1 ms

500

A

VF(*1)

Diodning oldinga kuchlanishi

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Qisqa uzilish oqimi

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

Td(off)

O'chirish kechikish vaqti

МанC =250A,

VCE = 1800V, VGE = ±15V, RG(OFF) = 9.0Ω , CGE = 56nF,

Ls = 150nH,

Tvj= 25 °C

1480

ns

Tvj= 125 °C

1550

Tvj= 150 °C

1570

TF

Pasayish vaqti

Tvj= 25 °C

1280

ns

Tvj= 125 °C

1920

Tvj= 150 °C

2120

Eo'chirilgan

O'chirish energiya yo'qotilishi

Tvj= 25 °C

300

mJ

Tvj= 125 °C

380

Tvj= 150 °C

400

Td ((on)

O'chirish kechikish vaqti

МанC =250A,

VCE = 1800V, VGE = ±15V, RG(ON) = 6.0Ω , CGE = 56nF,

Ls = 150nH,

Tvj= 25 °C

640

ns

Tvj= 125 °C

650

Tvj= 150 °C

650

TR

O'sish vaqti

Tvj= 25 °C

220

ns

Tvj= 125 °C

235

Tvj= 150 °C

238

Eвключено

Ishga tushirish energiyasi Yoʻqotish

Tvj= 25 °C

395

mJ

Tvj= 125 °C

510

Tvj= 150 °C

565

Qrr

Diod Orqaga

Qaytarib olish haqi

МанF =250A,

VCE = 1800V,

- dМанF/dt = 1200A/us, (Tvj= 125 °C).

Tvj= 25 °C

190

μC

Tvj= 125 °C

295

Tvj= 150 °C

335

Манrr

Diod Orqaga

Qayta tiklash oqimi

Tvj= 25 °C

185

A

Tvj= 125 °C

210

Tvj= 150 °C

216

Erek

Diod Orqaga

energiyani tiklash

Tvj= 25 °C

223

mJ

Tvj= 125 °C

360

Tvj= 150 °C

410