YT3000SW45,IGBT moduli,FWD bilan, StakPak paketi ,YT

Parametr

Simvol

Shartlar

Qiymat

Бирлик

Kollektor-emitter kuchlanishi

V CES

V GE =0V, T vj =25 ° C

4500

V

DC Kollektsioner Cu rrent

Ман C

T C =100 ° C,T vj = 125 ° C

2000

A

Pik kollektor oqimi

Ман M

t p = 1 ms

4000

A

Gate -Emiter Voltaj

V GES

± 20

V

Jami Quvvat Bo'shilish

P tot

T C =25 ° C,T vj = 125 ° C

20800

W

DC Oldinga Cu rrent

Ман F

2000

A

Pik Oldinga Cur ijara

Ман FRM

t p = 1 ms

4000

A

Surge oqimi

Ман FSM

V R =0V,T vj = 125 ° C,

t p =10ms,yarim-sinusoida

14000

A

IGBT qisqa tutashuv SOA

t psc

V CC =3400V, V MET CHIP ≤4500V V GE ≤15V,T vj ≤125 ° C

10

μs

Maksimal Janktsiya Harorat

T vj (maksimal )

125

℃

Junction Ishlash temperaturasida

T vj (op )

-40~125

℃

Korpus harorati

T C

-40~125

℃

Saqlanish harorati

T sTG

-40~70

℃

O'rnatish kuchi

F M

60~75

kN

Parametr

Simvol

Shartlar

Qiymat

Бирлик

Min.

Tip.

Max.

Kollektsioner-Emitter Qaytish Kuchlanishi

V(BR) CES

VGE=0V, IC=10mA, Tvj=25℃

4500

V

Kollektsioner-Emitter To'yingan Kuchlanishi

VCE(sat)

IC=2000A, VGE=15V

Tvj=25℃

2.70

3.05

V

Tvj=125℃

3.35

3.85

V

Kollektsioner-Emitter Kesish Joriy

ICES

VCE=4500V, VGE=0V

Tvj=25℃

1

mA

Tvj=125℃

15

100

mA

Gate-Emitter oqim oqishi

IGES

VCE=0V, VGE=±20V, Tvj=125℃

-500

500

nA

Darvozani-emitterning chegara kuchlanishi

VGE (oʻn)

IC=320mA, VCE=VGE, Tvj=25℃

6.7

7.7

V

Darvoza zaryadi

Qg

IC=2000A, VCE=2800V, VGE=-15V~+15V

10

μC

Kirish sig'imi

Cies

VCE=25V, VGE=0V, f=500kHz, Tvj=25℃

213

nF

Chiqarish quvvati

Koʻz

15.3

nF

Teskari o'tkazish sig'imi

Cres

4.7

nF

Ichki darvoza qarshiligi

RGint

0

ω

O'chirish kechikish vaqti

td(on)

IC=2000A,

VCE=2800V,

VGE=±15V,

RGon=1.8Ω,

RGoff=8.2Ω,

CGE=330nF,

LS=140nH,

Induktiv yuk

Tvj=25℃

1100

ns

Tvj=125℃

900

ns

O'sish vaqti

tr

Tvj=25℃

400

ns

Tvj=125℃

450

ns

O'chirish kechikish vaqti

td(off)

Tvj=25℃

3800

ns

Tvj=125℃

4100

ns

Pasayish vaqti

tf

Tvj=25℃

1200

ns

Tvj=125℃

1400

ns

Yoqish O'tkazish Energiya

EON

Tvj=25℃

14240

mJ

Tvj=125℃

15730

mJ

O'chirish O'tkazish Energiya

Eof

Tvj=25℃

6960

mJ

Tvj=125℃

8180

mJ

Qisqa uzilish oqimi

ISC

VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃

VCEM CHIP≤4500V

8400

A

Parametr

Simvol

Shartlar

Qiymat

Бирлик

Min.

Tip.

Max.

Oldinga Kuchlanish

VF

IF=2000A

Tvj=25℃

2.60

V

Tvj=125℃

2.85

V

Teskari tiklanish tok

Irr

IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH,

Induktiv yuk

Tvj=25℃

1620

A

Tvj=125℃

1970

A

Teskari Qaytish Zaryadi

Qrr

Tvj=25℃

1750

uC

Tvj=125℃

2700

uC

Teskari tiklanish vaqti

trr

Tvj=25℃

4.0

us

Tvj=125℃

5.1

us

Teskari Qaytish Energiya Yo'qotilishi

Erec

Tvj=25℃

2350

mJ

Tvj=125℃

3860

mJ