4500V 2000A
Qisqa kirish:
YT tomonidan maxsus ishlab chiqarish, StakPak qadoqlash, IGBT moduli FWD bilan.
Xususiyatlar
Qo'llanish sohaları
Maksimal Nominal Qiymatlari
Parametr | Simvol | Shartlar | qiymat | BIT |
Kollektor-emitter kuchlanishi | V CES | V GE =0V, T vj =25 ° C | 4500 | V |
DC Kollektsioner Cu rrent | Ман C | T C =100 ° C,T vj = 125 ° C | 2000 | A |
Pik kollektor oqimi | Ман m | T P = 1 ms | 4000 | A |
Gate -Emiter kuchlanuvchi kuchlanuvchi kuch | V GES |
| ± 20 | V |
Jami Quvvat Bo'shilish | P tot | T C =25 ° C,T vj = 125 ° C | 20800 | W |
DC Oldinga Cu rrent | Ман F |
| 2000 | A |
Pik Oldinga Cur ijara | Ман FRM | T P = 1 ms | 4000 | A |
Surge oqimi | Ман FSM | V R =0V,T vj = 125 ° C, T P =10ms,yarim-sinusoida | 14000 | A |
IGBT qisqa tutashuv SOA | T psc | V CC =3400V, V MET CHIP ≤4500V V GE ≤15V,T vj ≤125 ° C | 10 | μs |
Maksimal Janktsiya Harorat | T vj (Maksimal ) |
| 125 | °C |
Junction Ishlash harorati | T vj (op ) |
| -40~125 | °C |
Korpus harorati | T C |
| -40~125 | °C |
Saqlanish harorati | T STG |
| -40~70 | °C |
O'rnatish kuchi | F M |
| 60~75 | KN |
IGBT xususiyat qiymatlari
Parametr | Simvol | Shartlar | qiymat | BIT | |||
Min. | Tip. | Max. | |||||
Kollektsioner-Emitter Qaytish Kuchlanishi | V(BR) CES | VGE=0V, IC=10mA, Tvj=25℃ | 4500 |
|
| V | |
Kollektsioner-Emitter To'yingan Kuchlanishi | VCE(sat) | IC=2000A, VGE=15V | Tvj=25℃ |
| 2.70 | 3.05 | V |
Tvj=125℃ |
| 3.35 | 3.85 | V | |||
Kollektsioner-Emitter Kesish Joriy | ICES | VCE=4500V, VGE=0V | Tvj=25℃ |
|
| 1 | mA |
Tvj=125℃ |
| 15 | 100 | mA | |||
Gate-Emitter oqim oqishi | IGES | VCE=0V, VGE=±20V, Tvj=125℃ | -500 |
| 500 | nA | |
Darvozani-emitterning chegara kuchlanishi | VGE (oʻn) | IC=320mA, VCE=VGE, Tvj=25℃ | 6.7 |
| 7.7 | V | |
Darvoza zaryadi | Qg | IC=2000A, VCE=2800V, VGE=-15V~+15V |
| 10 |
| μC | |
Kirish sig'imi | Cies |
VCE=25V, VGE=0V, f=500kHz, Tvj=25℃ |
| 213 |
| NF | |
Chiqarish quvvati | Koʻz |
| 15.3 |
| NF | ||
Teskari o'tkazish sig'imi | Cres |
| 4.7 |
| NF | ||
Ichki darvoza qarshiligi | RGint |
|
| 0 |
| Ω | |
O'chirish kechikish vaqti | td(on) |
IC=2000A, VCE=2800V, VGE=±15V, RGon=1.8Ω, RGoff=8.2Ω, CGE=330nF, LS=140nH, Induktiv yuk | Tvj=25℃ |
| 1100 |
| ns |
Tvj=125℃ |
| 900 |
| ns | |||
O'sish vaqti | tr | Tvj=25℃ |
| 400 |
| ns | |
Tvj=125℃ |
| 450 |
| ns | |||
O'chirish kechikish vaqti | td(off) | Tvj=25℃ |
| 3800 |
| ns | |
Tvj=125℃ |
| 4100 |
| ns | |||
Pasayish vaqti | tf | Tvj=25℃ |
| 1200 |
| ns | |
Tvj=125℃ |
| 1400 |
| ns | |||
Yoqish O'tkazish Energiya | EON | Tvj=25℃ |
| 14240 |
| mJ | |
Tvj=125℃ |
| 15730 |
| mJ | |||
O'chirish O'tkazish Energiya | Eof | Tvj=25℃ |
| 6960 |
| mJ | |
Tvj=125℃ |
| 8180 |
| mJ | |||
Qisqa uzilish oqimi |
ISC | VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃ VCEM CHIP≤4500V |
|
8400 |
|
A | |
Diod Xususiyat Qiymatlari
Parametr | Simvol | Shartlar | qiymat | BIT | |||
Min. | Tip. | Max. | |||||
Oldinga Kuchlanish | VF | IF=2000A | Tvj=25℃ |
| 2.60 |
| V |
Tvj=125℃ |
| 2.85 |
| V | |||
Teskari tiklanish tok | Irr |
IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH, Induktiv yuk | Tvj=25℃ |
| 1620 |
| A |
Tvj=125℃ |
| 1970 |
| A | |||
Teskari Qaytish Zaryadi | Qrr | Tvj=25℃ |
| 1750 |
| uC | |
Tvj=125℃ |
| 2700 |
| uC | |||
Teskari tiklanish vaqti | trr | Tvj=25℃ |
| 4.0 |
| us | |
Tvj=125℃ |
| 5.1 |
| us | |||
Teskari Qaytish Energiya Yo'qotilishi | Erec | Tvj=25℃ |
| 2350 |
| mJ | |
Tvj=125℃ |
| 3860 |
| mJ | |||
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Ularning mahsulot ro'yxatini kuzatishingiz va sizni qiziqtirgan har qanday savollarni berishingiz mumkin.
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