IGBT Modul 4500V

Parametr

Simvol

Shartlar

qiymat

BIT

Kollektor ‐Emiter kuchlanuvchi kuchlanuvchi kuch

V CES

V GE =0V, T vj =25 ° C

4500

V

DC Kollektor Jorov

Ман C

T C =100 ° C, T vj = 125 ° C

3000

A

Pik Kollektor Jorov

Ман m

T P = 1 ms

6000

A

Gate ‐Emiter kuchlanuvchi kuchlanuvchi kuch

V GES

± 20

V

Jami Quvvat Bo'shilish

P tot

T C =25 ° C, T vj = 125 ° C

31200

W

DC Oldinga Jorov

Ман F

3000

A

Pik Oldinga Jorov

Ман FRM

T P = 1 ms

6000

A

To'lqin Jorov

Ман FSM

V R =0V, T vj = 125 ° C,

T P =10 ms ,yarim ‐sinewave

21000

A

IGBT Qisqa CIRCUIT SOA

T psc

V CC =3400V, V MET CHIP ≤4500V V GE ≤15V, T vj ≤125 ° C

10

μs

Maksimal Junction Harorat

T vj (Maksimal )

125

°C

Junction Ishlash Harorat

T vj (op )

‐40~125

°C

Vazifa Harorat

T C

‐40~125

°C

Saqlash Harorat

T STG

‐40~70

°C

O'rnatish kuch

F M

90~130

KN

Parametr

Simvol

Shartlar

qiymat

BIT

Min .

Tip.

Maksimal .

Oldinga Kuchlanish

V F

Ман F =3000A

T vj =25 °C

2.60

V

T vj = 125 °C

2.85

V

Orqaga Qayta tiklash oqimi

Ман rr

IF=3000A, VR=2800V,

diF/dt=‐2500A/μs, VGE=15V,

RGon=1.5Ω,

LS=140nH,

Induktiv yuk

T vj =25 °C

1690

A

T vj = 125 °C

2750

A

Orqaga Qaytarib olish haqi

Q rr

T vj =25 °C

3000

uC

T vj = 125 °C

3950

uC

Orqaga Qayta tiklash vaqti

T rr

T vj =25 °C

1.80

us

T vj = 125 °C

2.20

us

Orqaga Qaytish energiya Yoʻqotish

E rek

T vj =25 °C

4000

mJ

T vj = 125 °C

6300

mJ