YMIBD800-17, Modul IGBT, IGBT Suis Dwi, CRRC

(Simbol)

(Parameter)

(Syarat ujian)

(nilai)

(Unit)

VCES

Voltan kolektor-emiter

V GE = 0V, TC= 25 。C

1700

V

V GES

Voltan penyiaran pintu

TC= 25 。C

± 20

V

I C

Arus kolektor-penerbit

TC = 80 。C

800

A

I C (((PK)

Arus puncak kolektor

t P=1ms

1600

A

P max

Maks. pengaliran kuasa transistor

Tvj = 150 。C, TC = 25 。C

6.94

kw

I 2t

Dioda I 2t

VR =0V, t P = 10ms, Tvj = 125 。C

120

kA2s

Visol

Voltan penebat setiap modul

(Terminal biasa ke plat asas),

AC RMS,1 minit, 50Hz,TC= 25 。C

4000

V

Q PD

Pelepasan separa setiap modul

IEC1287. V 1 = 1800V, V 2 = 1300V, 50Hz RMS, TC = 25 。C

10

pC

(Simbol )

(Parameter)

(Syarat ujian)

(Min )

(Jenis )

(Max )

(Unit )

I CES

Arus pemotongan kolektor

V GE = 0V,VCE = VCES

1

mA

V GE = 0V, VCE = VCES, TC = 125 ° C

25

mA

I GES

Pasaran kebocoran pintu

V GE = ±20V, VCE = 0V

4

μA

V GE (TH)

Voltan ambang pintu

I C = 40mA, V GE = VCE

5.00

5.70

6.50

V

VCE (berada)

Tegangan Penyerapan Pengumpul-Pemancar

V GE = 15V, I C = 800A

2.30

2.60

V

V GE = 15V, I C = 800A,Tvj = 125 ° C

2.80

3.10

V

I F

Diod arus ke hadapan

直流 DC

800

A

I FRM

Arus Maju Maksimum Dioda

t P = 1ms

1600

A

VF(*1)

Voltan dioda ke hadapan

I F = 800A

1.70

2.00

V

I F = 800A, Tvj = 125 °C

1.80

2.10

V

C ies

Kapasiti input

VCE = 25V, V GE = 0V, f = 1MHz

60

nF

Q g

Bayaran pintu

±15V

9

μC

C res

Kapasiti pemindahan terbalik

VCE = 25V, V GE = 0V, f = 1MHz

-

nF

L M

Induktansi modul

20

nH

R INT

Rintangan transistor dalaman

270

μΩ

I SC

Arus litar pintas, ISC

Tvj = 125°C, VCC = 1000V,

V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2)×di/dt,

IEC 6074-9

3700

A

td ((off)

Masa kelewatan penutupan

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

890

n

t f

Waktu kejatuhan

220

n

E OFF

Kehilangan tenaga penutupan

220

mJ

td ((on)

Masa kelewatan penyambutan

320

n

t r

Masa naik

190

n

EON

Kehilangan tenaga semasa menyala

160

mJ

Q rr

Muatan pemulihan diod terbalik

I F = 800A

VCE = 900V

diF/dt =4000A/us

260

μC

I r

Diod arus pemulihan terbalik

510

A

E rec

Diod pemulihan tenaga terbalik

180

mJ

td ((off)

Masa kelewatan penutupan

I C =800A

VCE =900V

L ~ 100nH

V GE = ±15V

RG(ON) = 2.2Ω

RG(OFF)= 2.2Ω

980

n

t f

Waktu kejatuhan

280

n

E OFF

Kehilangan tenaga penutupan

290

mJ

td ((on)

Masa kelewatan penyambutan

400

n

t r

Masa naik

250

n

EON

Kehilangan tenaga semasa menyala

230

mJ

Q rr

Muatan pemulihan diod terbalik

I F = 800A

VCE = 900V

diF/dt =4000A/us

420

μC

I r

Diod arus pemulihan terbalik

580

A

E rec

Diod pemulihan tenaga terbalik

280

mJ