Modul IGBT 3300V

Simbol

Parameter

Keadaan Ujian

nilai

unit

VCES

Voltan kolektor-emiter

VGE = 0V, TC = 25 °C

3300

V

VGES

Voltan penyiaran pintu

TC= 25 °C

± 20

V

IC

Arus kolektor-penerbit

TC = 100 °C

250

A

IC ((PK)

Arus puncak kolektor

tP=1ms

500

A

Pmax

Maks. pengaliran kuasa transistor

Tvj = 150°C, TC = 25 °C

2.6

kw

I2t

Dioda I2t

VR = 0V, tP = 10ms, Tvj = 150 °C

20

kA2s

Visol

Voltan penebat - setiap modul

( Terminal yang disambungkan ke plat asas), AC RMS,1 min, 50Hz, TC= 25 °C

6

kV

QPD

Pelepasan separa - setiap modul

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

PC

Simbol

Parameter

Keadaan Ujian

Min.

- TIP.

Max.

unit

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Pasaran kebocoran pintu

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Voltan ambang pintu

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penuh kolektor-emiter voltan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diod arus ke hadapan

DC

250

A

IFRM

Pasaran arus hadapan puncak dioda

tP = 1ms

500

A

VF(*1)

Voltan dioda ke hadapan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Arus pendek😉

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Pasaran kebocoran pintu

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Voltan ambang pintu

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penuh kolektor-emiter

voltan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diod arus ke hadapan

DC

250

A

IFRM

Pasaran arus hadapan puncak dioda

tP = 1ms

500

A

VF(*1)

Voltan dioda ke hadapan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Arus pendek😉

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

td (((off)

Masa kelewatan penutupan

SayaC = 250A,

VCE = 1800V, VGE = ±15V, rG ((OFF) = 9.0Ω , CGE = 56nF,

LS = 150nH,

tvj= 25 °C

1480

n

tvj= 125 °C

1550

tvj= 150 °C

1570

tF

Waktu kejatuhan

tvj= 25 °C

1280

n

tvj= 125 °C

1920

tvj= 150 °C

2120

Edimatikan

Kehilangan tenaga penutupan

tvj= 25 °C

300

mJ

tvj= 125 °C

380

tvj= 150 °C

400

tD (dalam)

Masa kelewatan penyambutan

SayaC = 250A,

VCE = 1800V, VGE = ±15V, rG ((ON) = 6.0Ω , CGE = 56nF,

LS = 150nH,

tvj= 25 °C

640

n

tvj= 125 °C

650

tvj= 150 °C

650

tr

Masa naik

tvj= 25 °C

220

n

tvj= 125 °C

235

tvj= 150 °C

238

Epada

Tenaga penyambungan Kerugian

tvj= 25 °C

395

mJ

tvj= 125 °C

510

tvj= 150 °C

565

Qrr

Dioda songsang

Bayaran pemulihan

SayaF = 250A,

VCE = 1800V,

- DSayaF/dt = 1200A/us, (tvj= 125 °C).

tvj= 25 °C

190

μC

tvj= 125 °C

295

tvj= 150 °C

335

Sayarr

Dioda songsang

arus pemulihan

tvj= 25 °C

185

A

tvj= 125 °C

210

tvj= 150 °C

216

EREC

Dioda songsang

Tenaga pemulihan

tvj= 25 °C

223

mJ

tvj= 125 °C

360

tvj= 150 °C

410