4500V 3000A ,IGBT Module, StakPak Package, with FWD
Features
Applications
Maximum Rated Values
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector‐Emitter Voltage |
VCES |
VGE=0V,Tvj=25°C |
4500 |
V |
DC Collector Current |
IC |
TC=100°C,Tvj=125°C |
3000 |
A |
Peak Collector Current |
ICM |
tp=1ms |
6000 |
A |
Gate‐Emitter Voltage |
VGES |
|
±20 |
V |
Total Power Dissipation |
Ptot |
TC=25°C,Tvj=125°C |
31200 |
W |
DC Forward Current |
IF |
|
3000 |
A |
Peak Forward Current |
IFRM |
tp=1ms |
6000 |
A |
Surge Current |
IFSM |
VR=0V,Tvj=125°C, tp=10ms,half‐sinewave |
21000 |
A |
IGBT Short Circuit SOA |
tpsc |
VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C |
10 |
μs |
Maximum Junction Temperature |
Tvj(max) |
|
125 |
℃ |
Junction Operating Temperature |
Tvj(op) |
|
‐40~125 |
℃ |
Case temperature |
TC |
|
‐40~125 |
℃ |
Storage Temperature |
Tstg |
|
‐40~70 |
℃ |
Mounting force |
FM |
|
90~130 |
kN |
Diode Characteristic Values
Parameter |
Symbol |
Conditions |
Value |
Unit |
|||
Min. |
Typ. |
Max. |
|||||
Forward Voltage |
VF |
IF=3000A |
Tvj=25℃ |
|
2.60 |
|
V |
Tvj=125℃ |
|
2.85 |
|
V |
|||
Reverse Recovery Current |
Irr |
IF=3000A, VR=2800V, diF/dt=‐2500A/μs, VGE=15V, RGon=1.5Ω, LS=140nH, Inductive load |
Tvj=25℃ |
|
1690 |
|
A |
Tvj=125℃ |
|
2750 |
|
A |
|||
Reverse Recovery Charge |
Qrr |
Tvj=25℃ |
|
3000 |
|
uC |
|
Tvj=125℃ |
|
3950 |
|
uC |
|||
Reverse Recovery Time |
trr |
Tvj=25℃ |
|
1.80 |
|
us |
|
Tvj=125℃ |
|
2.20 |
|
us |
|||
Reverse Recovery Energy Loss |
Erec |
Tvj=25℃ |
|
4000 |
|
mJ |
|
Tvj=125℃ |
|
6300 |
|
mJ |
|||
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