Single Switch IGBT Module,YMIF750-65_CRRC

VCES

6500 V

VCE(sat)        Typ.

3.0 V

IC             Max.

750 A

IC(RM)         Max.

1500 A

Symbol

Parameter

Test Conditions

Value

Unit

V_CES

Collector-emitter voltage

VGE = 0V, TC= 25 °C

6500

V

V_GES

Gate-emitter voltage

TC= 25 °C

± 20

V

I_C

Collector-emitter current

TC = 80 °C

750

A

I_C(PK)

Peak collector current

tP=1ms

1500

A

P_max

Max. transistor power dissipation

Tvj = 150°C, TC = 25 °C

11.7

kW

I²t

Diode I2t

VR =0V, tP = 10ms, Tvj = 150 °C

460

kA2s

V_isol

Isolation voltage - per module

 ( Commoned terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C

10.2

kV

Q_PD

Partial discharge - per module

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

pC

Rth(J-C) IGBT

Thermal resistance - IGBT

8.5

K / kW

Rth(J-C) Diode

Thermal resistance - Diode

19.0

K / kW

Rth(C-H) IGBT

Thermal resistance -

case to heatsink (IGBT)

Mounting torque 5Nm,

with mounting grease 1W/m·°C

9

K / kW

Rth(C-H) Diode

Thermal resistance -

case to heatsink (Diode)

Mounting torque 5Nm,

with mounting grease 1W/m·°C

18

K / kW

Tvjop

Operating junction temperature

( IGBT )

-40

125

°C

( Diode )

-40

125

°C

Tstg

存储温度

Storage temperature range

-40

125

°C

M

Screw torque

Mounting   –M6

5

Nm

Electrical connections   – M4

2

Nm

Electrical connections   – M8

10

Nm

符号  Symbol

参数名称 Parameter

条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

ICES

集电极截止电流

Collector cut-off current

VGE = 0V,VCE  = VCES

1

mA

VGE = 0V, VCE  = VCES, TC=125 °C

90

mA

IGES

栅极漏电流

Gate leakage current

VGE = ±20V, VCE  = 0V

1

μA

VGE (TH)

栅极-发射极阈值电压 Gate threshold voltage

IC = 120mA, VGE = VCE

5.00

6.00

7.00

V

VCE (sat)(*1)

集电极-发射极饱和电压

Collector-emitter saturation

voltage

VGE =15V, IC = 750A

3.0

3.4

V

VGE =15V, IC = 750A, Tvj = 125 °C

3.9

4.3

V

IF

二极管正向直流电流 Diode forward current

DC

750

A

IFRM

二极管正向重复峰值电流  Diode peak forward current

tP = 1ms

1500

A

VF(*1)

二极管正向电压

Diode forward voltage

IF = 750A, VGE  = 0

2.55

2.90

V

IF = 750A, VGE  = 0, Tvj  = 125 °C

2.90

3.30

V

ISC

短路电流

Short circuit current

Tvj = 125°C, VCC = 4500V, VGE ≤15V, tp ≤10μs,

VCE(max) = VCES – L(*2) ×di/dt, IEC 6074-9

2800

A

Cies

输入电容

Input capacitance

VCE = 25V, VGE  = 0V, f = 100kHz

123

nF

Qg

栅极电荷

Gate charge

±15V

9.4

μC

Cres

反向传输电容

Reverse transfer capacitance

VCE = 25V, VGE  = 0V, f = 100kHz

2.6

nF

LM

模块电感

Module inductance

10

nH

RINT

内阻

Internal transistor resistance

90

mΩ

td_(off)

关断延迟时间

Turn-off delay time

IC =750A,

VCE = 3600V,   VGE =  ±15V,   RG(OFF) = 6.8Ω , CGE = 330nF,   LS = 280nH,

Tvj= 25 °C

3060

ns

Tvj= 125 °C

3090

t_f

下降时间 Fall time

Tvj= 25 °C

2390

ns

mJ

ns

ns

mJ

μC

Tvj= 125 °C

2980

E_OFF

关断损耗

Turn-off energy loss

Tvj= 25 °C

3700

Tvj= 125 °C

4100

td_(on)

开通延迟时间

Turn-on delay time

IC =750A,

VCE = 3600V,  VGE =  ±15V,  RG(ON) = 1.0Ω , CGE = 330nF,  LS = 280nH,

Tvj= 25 °C

670

Tvj= 125 °C

660

tr

上升时间 Rise time

Tvj= 25 °C

330

Tvj= 125 °C

340

E_ON

开通损耗

Turn-on energy loss

Tvj= 25 °C

4400

Tvj= 125 °C

6100

Qrr

二极管反向恢复电荷 Diode reverse

recovery charge

IF =750A,

VCE = 3600V,

- diF/dt = 3000A/us, (Tvj= 125 °C).

Tvj= 25 °C

1300

Tvj= 125 °C

1680

Irr

二极管反向恢复电流 Diode reverse

recovery current

Tvj= 25 °C

1310

A

mJ

Tvj= 125 °C

1460

Erec

二极管反向恢复损耗 Diode reverse

recovery energy

Tvj= 25 °C

2900

Tvj= 125 °C

4080