IGBT Module,Single Switch IGBT ,YMIF1200-45_CRRC

VcEs

4500

V

VCE(sat)

(typ)       

2.30

V

Ic

(max)      

1200

A

ICRM)

(max)        

2400

A

符号
(Symbol)

参数名称
(Parameter)

测试条件
(Test Conditions)

数值
(value)

单 位
(Unit)

VcES

集电极-发射极电压
Collector-emitter voltage

VGE=OV,Tvj=25℃

4500

V

VGES

  栅极-发射极电压
Gate-emitter voltage

±20

V

Ic

     集电极电流
Collector-emitter voltage

Tvj=125℃,Tcase=85℃

1200

A

Ic(PK)

     集电极峰值电流
Peak collector current

1ms

2400

A

Pmax

     晶体管部分最大损耗

Max.transistor power dissipation

Tvj=125℃,Tcase=25℃

12.5

kW

I²t

二极管²t值
Diode  I²t

VR=0V,tp=10ms,Tvj=125℃

530

kA²s

Visol

       绝缘电压(模块)

Isolation voltage-per module

短接所有端子，端子与基板间施加电压
(Commoned terminals to base plate),
AC RMS,1 min,50Hz

10200

V

QpD

     局部放电电荷(模块)
Partial discharge-per module

IEC1287.V1=6900V,V2=5100V,50Hz         RMS

10

pC

爬电距离

Creepage distance

56mm

绝缘间隙

Clearance

26mm

耐漏电起痕指数

CTI(Critical Tracking Index)

>600

Thermal &Mechanical Data

符号
(Symbol)

   参数名称
(Parameter)

测试条件
(Test Conditions)

最小
(Min)

最大
(Max)

单 位
(Unit)

Rh(J-C)IGBT

       GBT结壳热阻

Thermal resistance-IGBT

结壳恒定功耗
Continuous dissipation-junction to case

8

K/kW

Rh(J-C)Diode

      二极管结壳热阻
Thermal resistance-diode

结壳恒定功耗
Continuous dissipation -jūnction to case

16

K/kW

Rt(C-H)

        接触热阻(模块)
     Thermal resistance-
case to heatsink (per module)

安装力矩5Nm(导热脂1W/m · ℃)
Mounting torque 5Nm
(with mounting grease 1W/m · ℃)

6

K/kW

Tv

结温Junction temperature

IGBT部分(IGBT)

125

℃

二极管部分(Diode)

125

℃

Tstg

存储温度Storage temperature range

-40

125

℃

M

安装力矩Screw torque

安装紧固用-M6 Mounting -M6

5

Nm

电路互连用-M4
Bectrical connections -M4

2

Nm

电路互连用-M8
Eectrical connections -M8

10

Nm

Tcase=25℃ unless stated otherwise

符号
(Symbol)

参数名称
(Parameter)

条件
(Test Conditions)

最 小
(Min)

典型
(Typ)

最 大
(Max)

单位
(Unit)

IcEs

集电极截止电流
Collector cut-off current

VGE=OV,VcE=VCES

1

mA

VGE=OV,VcE=VCEs,Tcase=125°C

90

mA

IGES

栅极漏电流
Gate leakage current

VGE=±20V,VcE=0V

1

μA

VGE(TH)

栅极-发射极阈值电压
Gate threshold voltage

Ic=120mA,VGE=VCE

5.0

6.0

7.0

V

VCE(sa)

集电极-发射极饱和电压
Collector-emitter saturation
voltage

VGE=15V,Ic=1200A

2.3

2.8

V

VGE=15V,Ic=1200A,Tvj=125°C

3.0

3.5

V

IF

二极管正向直流电流
Diode forward current

DC

1200

A

IFRM

二极管正向重复峰值电流
Diode maximum forward current

tp=1ms

2400

A

vF(1

二极管正向电压
Diode forward voltage

/F=1200A

2.4

2.9

V

/F=1200A,Tvj=125°C

2.7

3.2

V

Cies

输入电容
Input capacitance

VcE=25V,VGE=OV,f=1MHz

135

nF

Q₉

栅极电荷
Gate charge

±15V

11.9

μC

Cres

反向传输电容
Reverse transfer capacitance

VcE=25V,VGE=0V,f      =1MHz

3.4

nF

LM

模块电感
Module inductance

10

nH

RINT

内阻
Internal transistor resistance

90

μΩ

Isc

短路电流
Short circuit current,Isc

Tvj=125°C,Vcc=3400V,
VGE≤15V,tp≤10μs,
VCE(max)=VCEs-L(2×di/dt,

IEC 60747-9

5300

A

td(of)

关断延迟时间
Turn-off delay time

Ic=1200A
  VcE=2800V
Cge=220nF

  L～180nH
  VGE=±15V
RG(ON)=1.5Ω
RG(OFF)=2.7Ω

2700

ns

tf

下降时间
Fall time

700

ns

EOFF

关断损耗
Turn-off energy loss

5800

mJ

tdon)

开通延迟时间
Turn-on delay time

720

ns

t

上升时间
Rise time

270

ns

EON

开通损耗
Turn-on energy loss

3200

mJ

Qm

二极管反向恢复电荷
Diode reverse recovery charge

/F=1200A
   VCE =2800V
dip/dt =5000A/us

1200

μC

I

二极管反向恢复电流
Diode reverse recovery current

1350

A

Erec

二极管反向恢复损耗
Diode reverse recovery energy

1750

mJ

td(of)

关断延迟时间
Turn-off delay time

Ic=1200A
  VcE =2800V
Cge=220nF
  L～180nH
  VGE=±15V
RG(ON)=1.5Ω
RGOFF)=2.7Ω

2650

ns

tf

下降时间
Fall time

720

ns

EOFF

关断损耗
Turn-off energy loss

6250

mJ

tdon)

开通延迟时间
Turn-on delay time

740

ns

t

上升时间
Rise time

290

ns

EON

开通损耗
Turn-on energy loss

4560

mJ

Q

二极管反向恢复电荷
Diode reverse recovery charge

/F=1200A
    VcE=2800V
dip/dt =5000A/us

1980

μC

I

二极管反向恢复电流
Diode reverse recovery current

1720

A

Erec

二极管反向恢复损耗
Diode reverse recovery energy

3250

mJ