IGBT module,High current igbt module, single switch IGBT,YMIF2400-17,CRRC

(Symbol)

 (Parameter)

(Test Conditions)

 (value)

(Unit)

VCES

Collector-emitter voltage

V GE = 0V,Tvj = 25°C

1700

V

V GES

Gate-emitter voltage

± 20

V

I C

Collector-emitter current

T case = 100 °C, Tvj = 150 °C

2400

A

I C(PK)

Peak collector current

tp = 1ms

4800

A

P max

Max. transistor power dissipation

Tvj = 150°C, T case = 25 °C

19.2

kW

I 2t

 Diode I2t

VR =0V, t P  = 10ms, Tvj = 150 °C

1170

kA2s

Visol

Isolation voltage – per module

 ( Commoned terminals to base plate),

AC RMS,1 min, 50Hz

4000

V

Q PD

Partial discharge – per module

IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS

10

pC

Tcase = 25 °C  T case  = 25°C unless stated otherwise

(Symbol)

 (Parameter)

(Test Conditions)

(Min)

 (Typ)

 (Max)

 (Unit)

I CES

Collector cut-off current

V GE = 0V, VCE  = VCES

1

mA

V GE = 0V, VCE  = VCES , T case =125 °C

40

mA

V GE = 0V, VCE  = VCES , T case =150 °C

60

mA

I GES

Gate leakage current

V GE = ±20V, VCE  = 0V

1

μA

V GE (TH)

Gate threshold voltage

I C = 80mA, V GE  = VCE

5.0

6.0

7.0

V

VCE (sat)(*1)

 Collector-emitter saturation

voltage

VGE =15V, IC = 2400A

1.75

V

VGE =15V, IC = 2400A,Tvj = 125 °C

1.95

V

VGE =15V, IC = 2400A,Tvj = 150 °C

2.05

V

I F

Diode forward current

DC

2400

A

I FRM

Diode maximum forward current

t P = 1ms

4800

A

VF(*1)

Diode forward voltage

IF = 2400A

1.65

V

IF = 2400A, Tvj = 125 °C

1.75

V

IF = 2400A, Tvj = 150 °C

1.75

V

Cies

Input capacitance

VCE = 25V, V GE  = 0V, f = 1MHz

400

nF

Qg

 Gate charge

±15V

19

μC

Cres

Reverse transfer capacitance

VCE = 25V, V GE  = 0V, f = 1MHz

3

nF

L M

Module inductance

10

nH

R INT

Internal transistor resistance

110

μΩ

I SC

Short circuit current, ISC

Tvj = 150°C, V CC = 1000V, V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2) ×di/dt, IEC 6074-9

12000

A

td(off)

Turn-off delay time

I C = 2400A

VCE = 900V

L S  ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2320

ns

t f

Fall time

500

ns

E OFF

Turn-off energy loss

1050

mJ

td(on)

Turn-on delay time

450

ns

tr

Rise time

210

ns

EON

Turn-on energy loss

410

mJ

Qrr

Diode reverse recovery charge

I F = 2400A

VCE = 900V

diF/dt =10000A/us

480

μC

I rr

Diode reverse recovery current

1000

A

Erec

Diode reverse recovery energy

320

mJ

td(off)

Turn-off delay time

I C = 2400A

VCE = 900V

L S  ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2340

ns

t f

Fall time

510

ns

E OFF

Turn-off energy loss

1320

mJ

td(on)

Turn-on delay time

450

ns

tr

Rise time

220

ns

EON

Turn-on energy loss

660

mJ

Qrr

Diode reverse recovery charge

I F = 2400A

VCE = 900V

diF/dt =10000A/us

750

μC

I rr

Diode reverse recovery current

1200

A

Erec

Diode reverse recovery energy

550

mJ

td(off)

Turn-off delay time

I C = 2400A

VCE = 900V

L S  ~ 50nH

V GE = ±15V

R G(ON) = 0.5Ω

R G(OFF)= 0.5Ω

2340

ns

t f

Fall time

510

ns

E OFF

Turn-off energy loss

1400

mJ

td(on)

Turn-on delay time

450

ns

tr

 Rise time

220

ns

EON

Turn-on energy loss

820

mJ

Qrr

Diode reverse recovery charge

I F = 2400A

VCE = 900V

diF/dt =12000A/us

820

μC

I rr

Diode reverse recovery current

1250

A

Erec

Diode reverse recovery energy

620

mJ