IGBT Module 4500V

IGBT Module,Single Switch IGBT ,YMIF650-45_CRRC

IGBT Module,Single Switch IGBT ,YMIF650-45_CRRC

4500V 650A

Brand:

CRRC

Spu:

YMIF650-45

Introduction
Outline

Introduction

Brief introduction:

High voltage, single switch IGBT modules produced by CRRC. 4500V 650A.

Features

SPT+chip-set for low switching losses
Low VCEsat
Low drivering power
AlSiC base plate for high power cycling capability
AlN substrate for low thermal resistance

Typical application

Traction drives
DC chopper
High voltage inverters/converters

Maximum rated values

Parameter/参数	Symbol/符号	Conditions/条件	min	max	Unit
Collector-emitter voltage 集电极-发射极电压	VCES	VGE =0V,Tvj ≥25°C		4500	V
DC collector current 集电极电流	IC	TC =80°C		650	A
Peak collector current 集电极峰值电流	ICM	tp=1ms,Tc=80°C		1300	A
Gate-emitter voltage 栅极发射极电压	VGES		-20	20	V
Total power dissipation 总功率损耗	Ptot	TC =25°C,perswitch(IGBT)		6670	W
DC forward current 直流正向电流	IF			650	A
Peak forward current 峰值正向电流	IFRM	tp=1ms		1300	A
Surge current 浪涌电流	IFSM	VR =0V,Tvj =125°C,tp=10ms, half-sine wave		5300	A
IGBT short circuit SOA IGBT 短路安全工作区	tpsc	VCC =3400V,VCEMCHIP≤4500V VGE ≤15V,Tvj≤125°C		10	μs
Isolation voltage 绝缘电压	Visol	1min,f=50Hz		10200	V
Junction temperature 结温	Tvj			150	℃
Junction operating temperature 工作结温	Tvj(op)		-50	125	℃
Case temperature 壳温	TC		-50	125	℃
Storage temperature 储存温度	Tstg		-50	125	℃
Mounting torques 安装力矩	MS		4	6	Nm
	MT1		8	10
	MT2		2	3

IGBT characteristic values

Parameter/参数	Symbol/符号	Conditions/条件		Min	type	max	Unit
Collector (- emitter) breakdown voltage 集电极-发射极阻断电压	V(BR)CES	VGE =0V,IC=10mA, Tvj=25°C		4500			V
Collector-emitter saturation voltage 集电极-发射极饱和电压	VCEsat	IC =650A, VGE =15V	Tvj= 25°C		2.7	3.2	V
Collector-emitter saturation voltage 集电极-发射极饱和电压	VCEsat	IC =650A, VGE =15V	Tvj=125°C		3.4	3.8	V
Collector cut off current 集电极截止电流	ICES	VCE =4500V, VGE =0V	Tvj= 25°C			10	mA
Collector cut off current 集电极截止电流	ICES	VCE =4500V, VGE =0V	Tvj=125°C			100	mA
Gate leakage current 栅极漏电流	IGES	VCE =0V,VGE =20V, Tvj =125°C		-500		500	nA
Gate-emitter threshold voltage 栅极发射极阀值电压	VGE(TH)	IC =160mA,VCE =VGE, Tvj =25°C		4.5		6.5	V
Gate charge 栅极电荷	Qg	IC =650A,VCE =2800V, VGE =-15V … 15V			5.4		µC
Input capacitance 输入电容	Cies	VCE =25V,VGE =0V, f=1MHz,Tvj =25°C			71.4		nF
Output capacitance 输出电容	Coes				4.82
Reverse transfer capacitance 反向转移电容	Cres				1.28
Turn-on delay time 开通延迟时间	td(on)	VCC =2800V, IC =650A, RG =2.2Ω , VGE =±15V, Lσ=280nH, 感性负载	Tvj = 25 °C		420		ns
Turn-on delay time 开通延迟时间	td(on)		Tvj = 125 °C		528
Rise time 上升时间	tr		Tvj = 25 °C		160
Rise time 上升时间	tr		Tvj = 125 °C		190
Turn-off delay time 关断延迟时间	td(off)		Tvj = 25 °C		2100		ns
Turn-off delay time 关断延迟时间	td(off)		Tvj = 125 °C		2970
Fall time 下降时间	tf		Tvj = 25 °C		1600
Fall time 下降时间	tf		Tvj = 125 °C		2760
Turn-on switching loss energy 开通损耗能量	Eon		Tvj = 25 °C		1000		mJ
Turn-on switching loss energy 开通损耗能量	Eon		Tvj =125 °C		1600		mJ
Turn-off switching loss energy 关断损耗能量	Eoff		Tvj = 25 °C		2000		mJ
Turn-off switching loss energy 关断损耗能量	Eoff		Tvj =125 °C		2740		mJ
Short circuit current 短路电流	ISC	tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 3400V			3940		A

Diode characteristic values

Parameter/参数	Symbol/符号	Conditions/条件		min	type	max	Unit
Forward voltage 正向电压	VF	IF =650A	Tvj = 25 °C		3.2		V
Forward voltage 正向电压	VF	IF =650A	Tvj = 125 °C		3.6		V
Reverse recovery current 反向恢复电流	Irr	VCC =2800V, IC =650A, RG =2.2Ω , VGE =±15V, Lσ=280nH, 感性负载	Tvj = 25 °C		1200		A
Reverse recovery current 反向恢复电流	Irr		Tvj = 125 °C		1300		A
Recovered charge 恢复电荷	Qrr		Tvj = 25 °C		450		µC
Recovered charge 恢复电荷	Qrr		Tvj = 125 °C		550		µC
Reverse recovery time 反向恢复时间	trr		Tvj = 25 °C		660		ns
Reverse recovery time 反向恢复时间	trr		Tvj = 125 °C		750		ns
Reverse recovery energy 反向恢复能量	Erec		Tvj =25 °C		720		mJ
Reverse recovery energy 反向恢复能量	Erec		Tvj = 125 °C		860		mJ