3600V 1700A
Brief introduction
IGBT module,High voltage, produced by STARPOWER. 1700V 3600A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD3600SGT170C4S | Units |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current@ TC=25℃ Collector Current@ TC=80℃ | 5200 | A |
3600 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 7200 | A |
IF | Diode Continuous Forward Current | 3600 | A |
IFM | Diode Maximum Forward Current | 7200 | A |
PD | Maximum power Dissipation @ Tj= 175℃ | 19.7 | kW |
Tj | Maximum Junction Temperature | 175 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting | Signal Terminal Screw:M4 Power Terminal Screw:M8 | 1.8 to 2.1 8.0 to 10 |
N.m |
Torque | Mounting Screw:M6 | 4.25 to 5.75 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise note
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1700 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC= 145mA,VCE=VGE, Tj=25℃ | 5.2 | 5.8 | 6.4 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=3600A,VGE=15V, Tj=25℃ |
| 2.00 | 2.45 |
V |
IC=3600A,VGE=15V, Tj= 125℃ |
| 2.40 | 2.85 |
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
QG | Gate charge | VGE=- 15…+15V |
| 42.0 |
| μC |
RGint | Internal Gate Resistor | Tj=25℃ |
| 0.5 |
| Ω |
td(on) | Turn-On Delay Time |
VCC=900V,IC=3600A, RGon=0.4Ω, RGoff=0.5Ω, VGE=±15V,Tj=25℃ |
| 730 |
| ns |
tr | Rise Time |
| 205 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1510 |
| ns | |
tf | Fall Time |
| 185 |
| ns | |
Eon | Turn-On Switching Loss |
| 498 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 1055 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=3600A, RGon=0.4Ω, RGoff=0.5Ω, VGE=±15V,Tj= 125℃ |
| 785 |
| ns |
tr | Rise Time |
| 225 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1800 |
| ns | |
tf | Fall Time |
| 325 |
| ns | |
Eon | Turn-On Switching Loss |
| 746 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 1451 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 317 |
| nF |
Coes | Output Capacitance |
| 13.2 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 10.5 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃,VCC= 1000V, VCEM≤1700V |
|
14000 |
|
A |
LCE | Stray Inductance |
|
| 10 |
| nH |
RCC’+EE ’ | Module Lead Resistance, Terminal To Chip |
|
| 0.12 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=3600A | Tj=25℃ |
| 1.80 | 2.20 | V |
Tj= 125℃ |
| 1.90 | 2.30 | ||||
Qr | Recovered Charge |
IF=3600A, VR=900V, RGon=0.4Ω, VGE=- 15V | Tj=25℃ |
| 836 |
| μC |
Tj= 125℃ |
| 1451 |
| ||||
IRM | Reverse Recovery Current | Tj=25℃ |
| 2800 |
| A | |
Tj= 125℃ |
| 3300 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 590 |
| mJ | |
Tj= 125℃ |
| 1051 |
| ||||
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