IGBT Module,GD900SGY120C2S,STARPOWER

1200V 900A

Brand:

STARPOWER

Spu:

GD900SGY120C2S

Brief introduction

IGBT module, produced by STARPOWER. 1200V 600A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	1410 900	A
ICM	Pulsed Collector Current tp=1ms	1800	A
PD	Maximum Power Dissipation @ T =175oC	5000	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	900	A
IFM	Diode Maximum Forward Current tp=1ms	1800	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=900A,VGE=15V, Tj=25oC		1.80	2.25	V
		IC=900A,VGE=15V, Tj=125oC		2.10
		IC=900A,VGE=15V, Tj=150oC		2.15
VGE(th)	Gate-Emitter Threshold Voltage	IC=22.5mA,VCE=VGE, Tj=25oC	5.2	6.0	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			0.6		Ω
QG	Gate Charge	VGE=- 15V…+15V		7.40		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=900A, RGon= 1.5Ω,RGoff=0.9Ω, VGE=±15V,Tj=25oC		257		ns
tr	Rise Time			96		ns
td(off)	Turn-Off Delay Time			628		ns
tf	Fall Time			103		ns
Eon	Turn-On Switching Loss			43		mJ
Eoff	Turn-Off Switching Loss			82		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=900A, RGon= 1.5Ω,RGoff=0.9Ω, VGE=±15V,Tj= 125oC		268		ns
tr	Rise Time			107		ns
td(off)	Turn-Off Delay Time			659		ns
tf	Fall Time			144		ns
Eon	Turn-On Switching Loss			59		mJ
Eoff	Turn-Off Switching Loss			118		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=900A, RGon= 1.5Ω,RGoff=0.9Ω, VGE=±15V,Tj= 150oC		278		ns
tr	Rise Time			118		ns
td(off)	Turn-Off Delay Time			680		ns
tf	Fall Time			155		ns
Eon	Turn-On Switching Loss			64		mJ
Eoff	Turn-Off Switching Loss			134		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V		3600		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=900A,VGE=0V,Tj=25oC		1.71	2.16	V
		IF=900A,VGE=0V,Tj= 125oC		1.74
		IF=900A,VGE=0V,Tj= 150oC		1.75
Qr	Recovered Charge	VR=600V,IF=900A, -di/dt=6000A/μs,VGE=- 15V Tj=25oC		76		μC
IRM	Peak Reverse Recovery Current			513		A
Erec	Reverse Recovery Energy			38.0		mJ
Qr	Recovered Charge	VR=600V,IF=900A, -di/dt=6000A/μs,VGE=- 15V Tj= 125oC		143		μC
IRM	Peak Reverse Recovery Current			684		A
Erec	Reverse Recovery Energy			71.3		mJ
Qr	Recovered Charge	VR=600V,IF=900A, -di/dt=6000A/μs,VGE=- 15V Tj= 150oC		171		μC
IRM	Peak Reverse Recovery Current			713		A
Erec	Reverse Recovery Energy			80.8		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			20	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.18		mΩ
RthJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			0.030 0.052	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.016 0.027 0.010		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g