IGBT Module,GD800SGT120C2S_G8,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±30

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

1250

800

A

ICM

Pulsed Collector Current  tp= 1ms

1600

A

PD

Maximum Power Dissipation  @ Tj=175oC

4166

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

800

A

IFM

Diode Maximum Forward Current  tp=1ms

1600

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=800A,VGE= 15V, Tj=25oC

1.70

2.15

V

IC=800A,VGE= 15V, Tj=125oC

1.95

IC=800A,VGE= 15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=32.0mA,VCE=VGE, Tj=25oC

5.0

5.7

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.13

Ω

Cies

Input Capacitance

VCE=30V,f=1MHz,

VGE=0V

79.2

nF

Cres

Reverse Transfer

Capacitance

2.40

nF

QG

Gate Charge

VGE= 15V

4.80

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,  RG= 1.0Ω,

VGE=±15V, Tj=25oC

408

ns

tr

Rise Time

119

ns

td(off)

Turn-Off Delay Time

573

ns

tf

Fall Time

135

ns

Eon

Turn-On Switching

Loss

21.0

mJ

Eoff

Turn-Off Switching

Loss

72.4

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,  RG= 1.0Ω,

VGE=±15V, Tj= 125oC

409

ns

tr

Rise Time

120

ns

td(off)

Turn-Off Delay Time

632

ns

tf

Fall Time

188

ns

Eon

Turn-On Switching

Loss

26.4

mJ

Eoff

Turn-Off Switching

Loss

107

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,  RG= 1.0Ω,

VGE=±15V, Tj= 150oC

410

ns

tr

Rise Time

123

ns

td(off)

Turn-Off Delay Time

638

ns

tf

Fall Time

198

ns

Eon

Turn-On Switching

Loss

28.8

mJ

Eoff

Turn-Off Switching

Loss

112

mJ

ISC

SC Data

tP≤10μs,VGE= 15V,

Tj=150oC,VCC=900V, VCEM≤1200V

3200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=800A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=800A,VGE=0V,Tj= 125oC

1.85

IF=800A,VGE=0V,Tj= 150oC

1.85

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,

VGE=- 15V Tj=25oC

81.0

μC

IRM

Peak Reverse

Recovery Current

518

A

Erec

Reverse Recovery Energy

39.4

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,

VGE=- 15V Tj= 125oC

136

μC

IRM

Peak Reverse

Recovery Current

646

A

Erec

Reverse Recovery Energy

65.2

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6700A/μs,VGE=- 15V Tj= 150oC

155

μC

IRM

Peak Reverse

Recovery Current

684

A

Erec

Reverse Recovery Energy

76.6

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.18

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.036

0.048

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.123

0.163

0.035

K/W

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

1.1

2.5

3.0

2.0

5.0

5.0

N.m

G

Weight of Module

300

g