Brief introduction
IGBT module, produced by STARPOWER. 1200V 800A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD800HFT120C3S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC=80℃ | 1400 800 | A |
ICM | Pulsed Collector Current tp=1ms | 1600 | A |
IF | Diode Continuous Forward Current @ TC=80℃ | 800 | A |
IFM | Diode Maximum Forward Current tp=1ms | 1600 | A |
PD | Maximum Power Dissipation @ Tj=175℃ | 4.2 | kW |
Tjmax | Maximum Junction Temperature | 175 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting Torque | Signal Terminal Screw:M4 | 1.8 to 2.1 |
|
Power Terminal Screw:M8 | 8.0 to 10 | N.m | |
Mounting Screw:M6 | 4.25 to 5.75 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=32.0mA,VCE=VGE, Tj=25℃ | 5.0 | 5.8 | 6.5 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=800A,VGE=15V, Tj=25℃ |
| 1.70 | 2.15 |
V |
IC=800A,VGE=15V, Tj=125℃ |
| 2.00 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
td(on) | Turn-On Delay Time |
VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE=±15V,Tj=25℃ |
| 605 |
| ns |
tr | Rise Time |
| 225 |
| ns | |
td(off) | Turn-Off Delay Time |
| 830 |
| ns | |
tf | Fall Time |
| 155 |
| ns | |
Eon | Turn-On Switching Loss |
| / |
| mJ | |
Eoff | Turn-Off Switching Loss |
| / |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE=±15V,Tj=125℃ |
| 670 |
| ns |
tr | Rise Time |
| 220 |
| ns | |
td(off) | Turn-Off Delay Time |
| 960 |
| ns | |
tf | Fall Time |
| 175 |
| ns | |
Eon | Turn-On Switching Loss |
| 161 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 124 |
| mJ | |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 57.7 |
| nF |
Coes | Output Capacitance |
| 3.02 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 2.62 |
| nF | |
ISC |
SC Data | tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
3200 |
|
A |
RGint | Internal Gate Resistance |
|
| 1.25 |
| Ω |
LCE | Stray Inductance |
|
| 20 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=800A | Tj=25℃ |
| 1.65 | 2.10 | V |
Tj=125℃ |
| 1.65 |
| ||||
Qr | Recovered Charge | IF=800A, VR=600V, RGon=0.9Ω, VGE=-15V | Tj=25℃ |
| 86 |
| μC |
Tj=125℃ |
| 160 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 560 |
| A | |
Tj=125℃ |
| 720 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 38.0 |
| mJ | |
Tj=125℃ |
| 70.0 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 35.6 | K/kW |
RθJC | Junction-to-Case (per DIODE) |
| 62.0 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied) | 6 |
| K/kW |
Weight | Weight Module | 1500 |
| g |
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