IGBT Module,GD800HFL170C3S,STARPOWER

IGBT Module，1700V 800A

Brand:

STARPOWER

Spu:

GD800HFL170C3S

Brief introduction

IGBT module, produced by STARPOWER. 1700V 800A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=80oC	1050 800	A
ICM	Pulsed Collector Current tp=1ms	1600	A
PD	Maximum Power Dissipation @ Tj=175oC	4.85	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	800	A
IFM	Diode Maximum Forward Current tp=1ms	1600	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=800A,VGE=15V, Tj=25oC		2.50	2.95	V
		IC=800A,VGE=15V, Tj=125oC		3.00
		IC=800A,VGE=15V, Tj=150oC		3.10
VGE(th)	Gate-Emitter Threshold Voltage	IC=32.0mA,VCE=VGE, Tj=25oC	5.4		7.4	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		54.0		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		1.84		nF
QG	Gate Charge	VGE=- 15…+15V		6.2		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=800A, RG= 1.5Ω, VGE=±15V, Tj=25oC		235		ns
tr	Rise Time			110		ns
td(off)	Turn-Off Delay Time			390		ns
tf	Fall Time			145		ns
Eon	Turn-On Switching Loss			216		mJ
Eoff	Turn-Off Switching Loss			152		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=800A, RG= 1.5Ω, VGE=±15V, Tj= 125oC		250		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time			475		ns
tf	Fall Time			155		ns
Eon	Turn-On Switching Loss			280		mJ
Eoff	Turn-Off Switching Loss			232		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=800A, RG= 1.5Ω, VGE=±15V, Tj= 150oC		254		ns
tr	Rise Time			125		ns
td(off)	Turn-Off Delay Time			500		ns
tf	Fall Time			160		ns
Eon	Turn-On Switching Loss			312		mJ
Eoff	Turn-Off Switching Loss			256		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC= 1000V, VCEM≤1700V		2480		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=800A,VGE=0V, Tj=25oC		1.80	2.25	V
		IF=800A,VGE=0V, Tj= 125oC		1.95
		IF=800A,VGE=0V, Tj= 150oC		1.90
Qr	Recovered Charge	VCC=900V,IF=800A, -di/dt=8400A/μs,VGE=±15V, Tj=25oC		232		μC
IRM	Peak Reverse Recovery Current			720		A
Erec	Reverse Recovery Energy			134		mJ
Qr	Recovered Charge	VCC=900V,IF=800A, -di/dt=8400A/μs,VGE=±15V, Tj= 125oC		360		μC
IRM	Peak Reverse Recovery Current			840		A
Erec	Reverse Recovery Energy			222		mJ
Qr	Recovered Charge	VCC=900V,IF=800A, -di/dt=8400A/μs,VGE=±15V, Tj= 150oC		424		μC
IRM	Peak Reverse Recovery Current			880		A
Erec	Reverse Recovery Energy			259		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		20		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.37		mΩ
RθJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			30.9 49.0	K/kW
RθCS	Case-to-Sink (per IGBT) Case-to-Sink (per Diode)		19.6 31.0		K/kW
RθCS	Case-to-Sink		6.0		K/kW
M	Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6	1.8 8.0 4.25		2.1 10 5.75	N.m
G	Weight of Module		1500		g