Brief introduction
IGBT module, produced by STARPOWER. 1200V 800A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD800HFL120C3S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | @ TC=25℃ @ TC=80℃ | 1250 | A |
800 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 1600 | A |
IF | Diode Continuous Forward Current | 800 | A |
IFM | Diode Maximum Forward Current | 1600 | A |
PD | Maximum power Dissipation @ Tj=150℃ | 4310 | W |
TSC | Short Circuit Withstand Time @ Tj=125℃ | 10 | μs |
Tj | Operating Junction Temperature | -40 to +150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
I2t-value, Diode | VR=0V, t=10ms, Tj=125℃ | 140 | kA2s |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting Torque | Power Terminal Screw:M4 Power Terminal Screw:M8 | 1.7 to 2.3 8.0 to 10 | N.m |
Mounting Screw:M6 | 4.25 to 5.75 | N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
BV CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=32mA,VCE=VGE, Tj=25℃ | 5.0 | 6.2 | 7.0 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=800A,VGE=15V, Tj=25℃ |
| 1.8 |
|
V |
IC=800A,VGE=15V, Tj=125℃ |
| 2.0 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
Qge | Gate charge | IC=800A,VCE=600V, VGE=-15…+15V |
| 11.5 |
| μC |
td(on) | Turn-On Delay Time | VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE =±15V,Tj=25℃ |
| 600 |
| ns |
tr | Rise Time |
| 230 |
| ns | |
td(off) | Turn-Off Delay Time |
| 820 |
| ns | |
tf | Fall Time |
| 150 |
| ns | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=800A, RGon=3.3Ω, RGoff=0.39Ω, VGE =±15V,Tj=125℃ |
| 660 |
| ns |
tr | Rise Time |
| 220 |
| ns | |
td(off) | Turn-Off Delay Time |
| 960 |
| ns | |
tf | Fall Time |
| 180 |
| ns | |
Eon | Turn-On Switching Loss |
| 160 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 125 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 61.8 |
| nF |
Coes | Output Capacitance |
| 4.2 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 2.7 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃, VCC=900V, VCEM ≤1200V |
|
3760 |
|
A |
LCE | Stray Inductance |
|
| 20 |
| nH |
RCC’+EE’ | Module lead resistance, terminal to chip | TC=25℃ |
| 0.18 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=800A | Tj=25℃ |
| 2.4 |
| V |
Tj=125℃ |
| 2.2 |
| ||||
Qr | Diode Reverse Recovery Charge |
IF=800A, VR=600V, di/dt=-3600A/μs, VGE=-15V | Tj=25℃ |
| 37 |
| μC |
Tj=125℃ |
| 90 |
| ||||
IRM | Diode Peak Reverse Recovery Current | Tj=25℃ |
| 260 |
|
A | |
Tj=125℃ |
| 400 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 9 |
| mJ | |
Tj=125℃ |
| 24 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (IGBT Part,per 1/2 Module) |
| 0.029 | K/W |
RθJC | Junction-to-Case (Diode Part,per 1/2 Module) |
| 0.052 | K/W |
RθCS | Case-to-Sink (conductive grease applied, per Module) | 0.006 |
| K/W |
Weight | Weight of Module | 1500 |
| g |
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