Brief introduction
IGBT module, produced by STARPOWER. 1200V 600A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD600SGT120C2S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC=80℃ | 950 600 | A |
ICM | Pulsed Collector Current tp=1ms | 1200 | A |
IF | Diode Continuous Forward Current @ TC=80℃ | 600 | A |
IFM | Diode Maximum Forward Current tp=1ms | 1200 | A |
PD | Maximum Power Dissipation @ Tj=175℃ | 3333 | W |
Tjmax | Maximum Junction Temperature | 175 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting Torque | Power Terminal Screw:M4 Power Terminal Screw:M6 | 1.1 to 2.0 2.5 to 5.0 | N.m |
Mounting Screw:M6 | 3.0 to 5.0 | N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=24.0mA,VCE=VGE, Tj=25℃ | 5.0 | 5.8 | 6.5 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=600A,VGE=15V, Tj=25℃ |
| 1.70 | 2.15 |
V |
IC=600A,VGE=15V, Tj=125℃ |
| 2.00 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
td(on) | Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1.2Ω, VGE=±15V, Tj=25℃ |
| 252 |
| ns |
tr | Rise Time |
| 88 |
| ns | |
td(off) | Turn-Off Delay Time |
| 560 |
| ns | |
tf | Fall Time |
| 131 |
| ns | |
Eon | Turn-On Switching Loss |
| 33.1 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 57.8 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1.2Ω, VGE=±15V, Tj=125℃ |
| 298 |
| ns |
tr | Rise Time |
| 102 |
| ns | |
td(off) | Turn-Off Delay Time |
| 648 |
| ns | |
tf | Fall Time |
| 179 |
| ns | |
Eon | Turn-On Switching Loss |
| 50.2 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 87.8 |
| mJ | |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 32.3 |
| nF |
Coes | Output Capacitance |
| 1.69 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 1.46 |
| nF | |
ISC |
SC Data | tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
2400 |
|
A |
RGint | Internal Gate Resistance |
|
| 1.3 |
| Ω |
LCE | Stray Inductance |
|
|
| 20 | nH |
RCC’+EE’ | Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=600A | Tj=25℃ |
| 1.65 | 2.10 | V |
Tj=125℃ |
| 1.65 |
| ||||
Qr | Recovered Charge | IF=600A, VR=600V, RG= 1.2Ω, VGE=-15V | Tj=25℃ |
| 60.3 |
| μC |
Tj=125℃ |
| 114 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 415 |
| A | |
Tj=125℃ |
| 543 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 28.1 |
| mJ | |
Tj=125℃ |
| 51.8 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 0.045 | K/W |
RθJC | Junction-to-Case (per DIODE) |
| 0.080 | K/W |
RθCS | Case-to-Sink (Conductive grease applied) | 0.035 |
| K/W |
Weight | Weight Module | 300 |
| g |
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